si4621dy Vishay, si4621dy Datasheet - Page 5

• Manufacturer Part Number: si4621dy
• Description: P-channel 20-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 73855
S-71205–Rev. B, 18-Jun-07
100
30
10
1
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
0
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
0.4
– Source-to-Drain Voltage (V)
T
Threshold Voltage
J
– Temperature (°C)
25
0.6
50
0.8
75
I
0.01
D
100
0.1
1
10
= 250 µA
100
1
0.1
*V
1.2
*Limited by r
Safe Operating Area, Junction-to-Case
125
GS
Single Pulse
T
A
New Product
= 25 °C
V
A
1.4
minimum V
DS
150
= 25 °C, unless otherwise noted
– Drain-to-Source Voltage (V)
DS(on)
1
GS
BVDSS limited
at which r
DS(on)
10
0.30
0.25
0.20
0.15
0.10
0.05
0.00
50
40
30
20
10
0
10
0
is specified
-2
100
100 ms
1 s
10 s
dc
On-Resistance vs. Gate-to-Source Voltage
µs
1 ms
10 ms
Single Pulse Power, Junction-to-Ambient
10
2
-1
V
100
GS
T
A
– Gate-to-Source Voltage (V)
= 25 °C
Time (sec)
4
1
T
A
Vishay Siliconix
= 125 °C
6
10
Si4621DY
www.vishay.com
I
D
= 5A
8
100
600
10
5