si4166dy Vishay, si4166dy Datasheet - Page 4

• Manufacturer Part Number: si4166dy
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si4166DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.0
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
J
V
= 150 °C
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
I
D
75
= 250 µA
0.8
0.01
T
100
0.1
J
100
10
Limited by R
1
= 25 °C
0.01
1.0
I
D
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
125
= 5 mA
T
GS
A
= 25 °C
> minimum V
New Product
DS(on)
V
1.2
150
0.1
DS
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
0.020
0.016
0.012
0.008
0.004
0.000
DS(on)
250
200
150
100
50
0
0
10
0
0 .
0
is specified
On-Resistance vs. Gate-to-Source Voltage
1
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
GS
100
3
- Gate-to-Source Voltage (V)
Single Pulse Power
4
Time (s)
0.1
5
S-82661-Rev. A, 03-Nov-08
Document Number: 68953
6
7
1
T
T
I
D
J
J
8
= 125 °C
= 25 °C
= 15 A
9
10
1
0