si4124dy Vishay, si4124dy Datasheet

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si4124dy

Manufacturer Part Number
si4124dy
Description
N-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
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Price
Part Number:
si4124dy-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
si4124dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4124dy-T1-GE3
Manufacturer:
VISHAY
Quantity:
53 423
Part Number:
si4124dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si4124dy-T1-GE3
Quantity:
70 000
Company:
Part Number:
si4124dy-T1-GE3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
40
(V)
S
S
S
G
C
= 25 °C.
1
2
3
4
0.0075 at V
0.009 at V
Si4124DY-T1-E3 (Lead (Pb)-free)
Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
Top View
DS(on)
SO-8
GS
GS
J
(Ω)
= 4.5 V
= 150 °C)
a, c
= 10 V
8
7
6
5
N-Channel 40-V (D-S) MOSFET
D
D
D
D
I
D
20.5
18.7
(A)
Steady State
d
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
21 nC
(Typ.)
New Product
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
thJA
thJF
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Synchronous Rectification
• DC/DC
Available
g
Typical
Tested
39
18
®
Power MOSFET
G
- 55 to 150
13.6
10.9
N-Channel MOSFET
2.1
2.5
1.6
Limit
± 20
20.5
16.4
4.7
5.7
3.6
40
50
33
54
a, b
a, b
a, b
a, b
a, b
D
S
Maximum
50
22
Vishay Siliconix
Si4124DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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si4124dy Summary of contents

Page 1

... Top View Ordering Information: Si4124DY-T1-E3 (Lead (Pb)-free) Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current ...

Page 2

... Si4124DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68601 S09-0392-Rev. B, 09-Mar-09 New Product 1.5 2 Si4124DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si4124DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0 250 µ 0 0.3 - 0 Junction Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 170 136 ...

Page 5

... T - Case Temperature (°C) C Current Derating*, Junction-to-Foot 1.80 1.44 1.08 0.72 0.36 0.00 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4124DY Vishay Siliconix 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si4124DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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