si4386dy Vishay, si4386dy Datasheet

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si4386dy

Manufacturer Part Number
si4386dy
Description
N-channel Reduced Qg, Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 73109
S-60781-Rev. C, 08-May-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
Ordering Information: Si4386DY-T1-E3 (Lead (Pb)-free)
0.0095 at V
0.007 at V
N-Channel Reduced Q
G
S
S
S
r
DS(on)
1
2
3
4
GS
GS
(Ω)
= 10 V
= 4.5 V
J
a
Top View
= 150 °C)
SO-8
a
a
I
D
8
7
6
5
13.5
16
(A)
a
D
D
D
D
A
Q
New Product
= 25 °C unless otherwise noted
g
Steady State
Steady State
L = 0.1 mH
T
T
T
T
11
(Typ)
t ≤ 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
g
, Fast Switching MOSFET
FEATURES
APPLICATIONS
• TrenchFET
• PWM Optimized
• 100 % R
• DC/DC Conversion for PC
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
Gen II Power MOSFETS
10 secs
Typical
2.8
3.1
16
13
34
71
18
2
G
N-Channel MOSFET
- 55 to 150
± 20
± 50
30
20
20
Steady State
D
S
Maximum
1.47
0.95
1.3
11
40
85
22
Vishay Siliconix
9
Si4386DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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si4386dy Summary of contents

Page 1

... Top View Ordering Information: Si4386DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... Si4386DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73109 S-60781-Rev. C, 08-May- 0.8 1.0 1.2 Si4386DY Vishay Siliconix 2200 C iss 1760 1320 880 C oss 440 C rss – Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4386DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C,unless noted 0 250 µA 0.2 D 0.0 - 0.2 - 0.4 - 0.6 - 0 – Temperature (°C) J Threshold Voltage *Limited Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 DS(on 0 °C C Single Pulse 0.01 0 – Drain-to-Source Voltage (V) ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73109. Document Number: 73109 S-60781-Rev. C, 08-May- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4386DY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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