si4972dy Vishay, si4972dy Datasheet - Page 9

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si4972dy

Manufacturer Part Number
si4972dy
Description
Dual N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73849
S-62660–Rev. C, 25-Dec-06
0.001
- 0.3
- 0.6
- 0.9
0.01
0.6
0.3
0.0
100
0.1
10
- 50
1
0.00
Source-Drain Diode Forward Voltage (Ch 2)
- 25
0.2
I
V
D
SD
= 250 µA
0
Threshold Voltage (Ch 2)
– Source-to-Drain Voltage (V)
T
T
J
J
0.4
= 150 °C
– Temperature (°C)
25
50
0.6
75
0.01
100
0.1
0.8
10
1
0.1
Safe Operating Area, Junction-to-Ambient (Ch 2)
100
T
*V
*Limited by r
J
I
D
GS
= 25 °C
1.0
= 5 mA
125
V
minimum V
DS
150
1.2
– Drain-to-Source Voltage (V)
DS(on)
Single Pulse
1
T
A
= 25 °C
GS
at which r
DS(on)
10
On-Resistance vs. Gate-to-Source Temperature (Ch 2)
0.20
0.16
0.12
0.08
0.04
0.00
30
24
18
12
6
0
0.001
is specified
Single Pulse Power, Junction-to-Ambient (Ch 2)
0
100 ms
10 s
10 ms
1 ms
1 s
dc
100
T
2
0.01
A
V
= 25 °C
GS
– Gate-to-Source Voltage (V)
Time (sec)
4
0.1
T
A
= 125 °C
Vishay Siliconix
6
Si4972DY
I
D
= 4.5 A
1
www.vishay.com
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10
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