si4973dy Vishay, si4973dy Datasheet - Page 3

• Manufacturer Part Number: si4973dy
• Description: Dual P-channel 25-v G-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72164
S-61006-Rev. B, 12-Jun-06
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
30
10
10
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
0.2
= 7.6 A
On-Resistance vs. Drain Current
= 15 V
6
V
SD
T
10
V
Q
0.4
J
GS
g
= 150 °C
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
= 4.5 V
- Drain Current (A)
Gate Charge
12
0.6
20
0.8
18
V
T
GS
J
1.0
= 25 °C
= 10 V
30
24
1.2
1.4
30
40
2500
2000
1500
1000
0.10
0.08
0.06
0.04
0.02
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 7.6 A
C
5
rss
= 10 V
2
T
V
V
0
J
DS
GS
- Junction Temperature (°C)
10
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
4
C
50
15
Vishay Siliconix
C
oss
I
D
iss
= 7.6 A
6
75
Si4973DY
20
www.vishay.com
100
8
25
125
150
30
10
3