si4922bdy Vishay, si4922bdy Datasheet - Page 4

• Manufacturer Part Number: si4922bdy
• Description: Dual N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si4922BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
100
0.4
0.2
0.0
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
I
D
V
= 250 µA
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
150 °C
0.6
50
75
0.01
100
0.1
0.8
10
1
25 °C
0.1
100
Safe Operating Area, Junction-to-Ambient
*Limited by r
*V
1.0
GS
125
V
minimum V
New Product
DS
150
1.2
DS(on)
- Drain-to-Source Voltage (V)
Single Pulse
1
T
A
= 25 °C
GS
at which r
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
is specified
100
80
60
40
20
0
0
0
100 µs
10 µs
1 ms
10 ms
100 ms
0 .
dc
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power, Junction-to-Ambient
1
100
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (sec)
125 °C
25 °C
S-70237–Rev. A, 05-Feb-07
0.1
5
Document Number: 74459
6
7
1
I
D
8
= 5 A
9
10
1
0