si4936cdy Vishay, si4936cdy Datasheet

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si4936cdy

Manufacturer Part Number
si4936cdy
Description
Dual N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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si4936cdy-T1-E3
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si4936cdy-T1-E3
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si4936cdy-T1-GE3
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si4936cdy-T1-GE3
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si4936cdy-T1-GE3
Manufacturer:
VISHAY
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Part Number:
si4936cdy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
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Part Number:
si4936cdy-T1-GE3
Quantity:
70 000
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
d. Based on T
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
V
DS
30
(V)
C
= 25 °C.
S
G
S
G
0.050 at V
0.040 at V
1
2
1
2
1
2
3
4
R
DS(on)
GS
GS
Top View
SO-8
J
(Ω)
= 4.5 V
= 10 V
= 150 °C)
a, c
Dual N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
D
D
5.8
5.5
D
D
(A)
1
1
2
2
Steady State
d
t ≤ 10 s
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
2.8 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
FEATURES
APPLICATIONS
G
stg
• Halogen-free According to IEC 61249-2-21
• Low Current DC/DC Conversion
• Notebook System Power
1
Definition
TrenchFET
N-Channel MOSFET
Typical
D
S
1
58
42
1
®
Power MOSFET
- 55 to 150
5.0
4.0
1.4
1.7
1.1
Limit
± 20
5.8
4.6
1.9
2.3
1.5
30
20
a, b
a, b
a, b
a, b
a, b
Maximum
75
55
G
Vishay Siliconix
2
Si4936CDY
N-Channel MOSFET
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
°C
W
V
A
1

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si4936cdy Summary of contents

Page 1

... Top View Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4936CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 2.0 2.5 400 300 200 100 1.7 1.5 1 1.1 0.9 0 Si4936CDY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si4936CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.3 2.1 1 1.7 1.5 1.3 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0.08 0. °C J 0.04 0.02 0.00 1.2 1.5 = 250 µA 75 100 125 150 100 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4936CDY Vishay Siliconix 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4936CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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