si4936bdy Vishay, si4936bdy Datasheet - Page 4

• Manufacturer Part Number: si4936bdy
• Description: Dual N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si4936BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.6
2.4
2.2
2.0
1.8
1.6
1.4
10
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
0.4
J
I
D
- Temperature (°C)
25
= 250 µA
T
0.6
50
J
= 150 °C
75
0.8
0.01
100
0.1
10
T
100
1
J
0.1
= 25 °C
Safe Operating Area, Junction-to-Ambient
1.0
*Limited by r
*V
125
GS
V
New Product
minimum V
1.2
150
DS
Single Pulse
- Drain-to-Source Voltage (V)
T
DS(on)
A
1
= 25 °C
GS
at which r
DS(on)
10
0.10
0.08
0.06
0.04
0.02
50
40
30
20
10
is specified
0
0.001
3
100 µs
10 ms
1 s
10 s
1 ms
100 ms
dc
On-Resistance vs. Gate-to-Source Voltage
4
0.01
100
V
GS
25 °C
Single Pulse Power
5
- Gate-to-Source Voltage (V)
0.1
Time (sec)
6
1
S-70306-Rev. A, 12-Feb-07
Document Number: 74469
125 °C
7
10
8
I
D
100
= 5.9 A
9
1000
10