si4948be Vishay, si4948be Datasheet

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si4948be

Manufacturer Part Number
si4948be
Description
Dual P-channel 60-v D-s 175? Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Ordering Information: Si4948BEY-T1-E3 (Lead (Pb)-free)
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
- 60
(V)
G
G
S
S
1
1
2
2
Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.150 at V
1
2
3
4
0.120 at V
R
Dual P-Channel 60-V (D-S) 175° MOSFET
Top View
DS(on)
SO-8
J
a
GS
= 150 °C)
GS
a
= - 4.5 V
(Ω)
= - 10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
a
A
= 25 °C, unless otherwise noted
I
D
- 3.1
- 2.8
Steady State
Steady State
L = 0.1 mH
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
G
R
R
Definition
J
V
V
E
I
I
P
, T
1
DM
thJA
I
I
AS
thJF
DS
GS
D
AS
S
D
stg
P-Channel MOSFET
S
D
®
1
1
Power MOSFET
Typical
10 s
- 3.1
- 2.6
2.4
1.7
- 2
53
85
30
- 55 to 175
± 20
- 60
- 25
15
11
Steady State
G
Maximum
2
- 2.4
- 2.0
- 1.1
0.95
62.5
110
1.4
37
P-Channel MOSFET
Vishay Siliconix
Si4948BEY
S
D
2
2
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si4948be Summary of contents

Page 1

... Top View Ordering Information: Si4948BEY-T1-E3 (Lead (Pb)-free) Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si4948BEY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72847 S09-1002-Rev. B, 01-Jun- °C J 0.8 1.0 1.2 Si4948BEY Vishay Siliconix 1000 800 C iss 600 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2 ...

Page 4

... Si4948BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 I DM Limited DS(on D(on) Limited 0 °C A Single Pulse BVDSS Limited ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72847. Document Number: 72847 S09-1002-Rev. B, 01-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4948BEY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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