si4816bdy Vishay, si4816bdy Datasheet - Page 6

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si4816bdy

Manufacturer Part Number
si4816bdy
Description
Dual N-channel 30-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet

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Si4816BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
6
0.020
0.016
0.012
0.008
0.004
0.000
40
32
24
16
8
0
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
= 9.5 A
5
V
V
= 15 V
1
V
3
GS
GS
DS
Q
Output Characteristics
= 10 thru 5 V
= 4.5 V
g
– Drain-to-Source Voltage (V)
I
– Total Gate Charge (nC)
10
D
– Drain Current (A)
Gate Charge
2
6
3 V
15
4 V
3
9
V
20
GS
= 10 V
2 V
12
4
25
15
30
5
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
40
32
24
16
0
8
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
0.5
- 25
C
V
I
D
GS
rss
= 9.5 A
V
V
6
DS
= 10 V
1.0
GS
T
Transfer Characteristics
J
C
0
– Drain-to-Source Voltage (V)
– Junction Temperature (°C)
oss
– Gate-to-Source Voltage (V)
1.5
25
Capacitance
12
2.0
T
25 °C
50
S-61962-Rev. C, 09-Oct-06
C
C
Document Number: 73026
= 125 °C
2.5
iss
18
75
3.0
100
3.5
24
- 55 °C
125
4.0
30
150
4.5

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