si4831bdy Vishay, si4831bdy Datasheet - Page 6

no-image

si4831bdy

Manufacturer Part Number
si4831bdy
Description
P-channel 30-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet
Si4831BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
T
C
50
- Case Temperature (°C)
75
J(max)
8
6
5
3
2
0
100
0
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
T
C
150
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
125
0
150
Power Derating, Junction-to-Ambient
25
T
C
- Case Temperature (°C)
50
75
S-71696-Rev. A, 13-Aug-07
Document Number: 70483
100
125
150

Related parts for si4831bdy