si4455dy Vishay, si4455dy Datasheet

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si4455dy

Manufacturer Part Number
si4455dy
Description
P-channel 150-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
si4455dy-T1-E3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
si4455dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si4455dy-T1-E3
Quantity:
1 469
Part Number:
si4455dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4455dy-T1-GE3
0
Company:
Part Number:
si4455dy-T1-GE3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Based on T
Document Number: 68631
S09-0393-Rev. B, 09-Mar-09
Ordering Information: Si4455DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
PRODUCT SUMMARY
V
- 150
DS
(V)
C
G
S
S
S
= 25 °C.
0.315 at V
0.295 at V
1
2
3
4
R
Si4455DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
GS
Top View
GS
SO-8
J
(Ω)
= - 6.0 V
= - 10 V
= 150 °C)
P-Channel 150-V (D-S) MOSFET
8
7
6
5
I
- 8.9
- 8.6
D
D
D
D
D
(A)
c
c
A
= 25 °C, unless otherwise noted
Q
23.2 nC
g
(Typ.)
New Product
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100% R
• 100% UIS Tested
• Active Clamp in Intermediate DC/DC Power Supplies
• H-Bridge High Side Switch for Lighting Application
Available
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
g
D
stg
Tested
G
®
Power MOSFET
P-Channel MOSFET
S
D
- 50 to 150
- 2.0
- 1.6
- 2.5
3.1
2.0
11.25
Limit
- 150
± 20
- 2.8
- 2.3
- 4.9
- 15
- 15
5.9
3.8
a, b
a, b
a, b
a, b
a, b
Vishay Siliconix
Si4455DY
www.vishay.com
Unit
mJ
°C
W
V
A
1

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si4455dy Summary of contents

Page 1

... Top View Ordering Information: Si4455DY-T1-E3 (Lead (Pb)-free) Si4455DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... Si4455DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 80 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... 0 1700 1360 1020 680 340 1.9 1 100 V DS 1.3 1.0 0.7 0 Si4455DY Vishay Siliconix T = 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si4455DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.0 0 250 µA D 0.4 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 2.0 1.6 1 °C 0.8 J 0.4 0.0 1.2 1.5 200 160 120 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4455DY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4455DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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