si4418dy Vishay, si4418dy Datasheet - Page 3

• Manufacturer Part Number: si4418dy
• Description: N-channel 200-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72513
S-70316-Rev. C, 12-Feb-07
0.20
0.16
0.12
0.08
0.04
0.00
10
20
10
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 3 A
0.2
On-Resistance vs. Drain Current
= 100 V
2
4
V
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
= 150 °C
0.4
- Total Gate Charge (nC)
I
D
4
Gate Charge
- Drain Current (A)
8
0.6
6
V
GS
12
= 6.0 V
0.8
8
T
V
J
GS
= 25 °C
16
1.0
= 10 V
10
New Product
1.2
20
12
1600
1400
1200
1000
0.20
0.16
0.12
0.08
0.04
0.00
2.5
2.0
1.5
1.0
0.5
0.0
800
600
400
200
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
10
= 3 A
= 10 V
C
2
rss
T
0
20
V
J
V
DS
- Junction Temperature (°C)
GS
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
30
4
50
C
40
Vishay Siliconix
C
oss
iss
I
75
6
D
50
= 3 A
Si4418DY
100
www.vishay.com
60
8
125
70
150
10
80
3