si4408dy Vishay, si4408dy Datasheet

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... stg Symbol sec R R thJA Steady State Steady State R thJF Si4408DY Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching D Low Switching Losses D Low Gate Drive Losses D 100% R Tested G APPLICATIONS D Self-Driven Synchronous Rectification N-Channel MOSFET ...

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... Si4408DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

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... Source-to-Drain Voltage (V) SD Document Number: 70687 S-03662—Rev. B, 14-Apr-03 New Product 25_C J 0.8 1.0 1.2 Si4408DY Vishay Siliconix Capacitance 4500 C 3600 iss 2700 1800 C oss C 900 rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

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... Si4408DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.3 = 250 0.0 -0.3 -0.6 -0.9 -1.2 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...