irf8010 International Rectifier Corp., irf8010 Datasheet - Page 2

• Manufacturer Part Number: irf8010
• Description: 100v Single N-channel Hexfet Power Mosfet In A To-220ab Package
• Manufacturer: International Rectifier Corp.

IRF8010
V
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
E
I
I
V
t
Q
t
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
R
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
V
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
AS
AR
SD
g
gs
gd
rr
2
DS(on)
(BR)DSS
eff.
/ T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C (unless otherwise specified)
J
Parameter
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
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–––
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–––
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
82
3830
3830
0.11
–––
–––
–––
–––
–––
–––
–––
130
120
480
280
530
–––
–––
–––
460
12
81
22
26
15
61
59
99
Typ.
-200
–––
–––
250
200
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
320
150
700
4.0
1.3
15
20
80
V/°C
m
nC
µA
nA
pF
nC
ns
ns
V
V
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 80A
= 80A
= 25°C, I
= 150°C, I
= 39
= 0V, I
= 10V, I
= V
= 100V, V
= 100V, V
= 20V
= -20V
= 25V, I
= 80V
= 10V
= 50V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
Max.
310
, I
45
26
D
Conditions
Conditions
Conditions
D
S
DS
D
D
DS
DS
= 250µA
F
= 250µA
= 80A, V
= 45A
= 45A
GS
GS
= 0V to 80V
= 80A, V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
= 0V
= 0V, T
www.irf.com
D
= 1mA
G
GS
DD
J
= 125°C
= 0V
= 50V
Units
mJ
mJ
A
D
S