irfr3709zcpbf International Rectifier Corp., irfr3709zcpbf Datasheet

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irfr3709zcpbf

Manufacturer Part Number
irfr3709zcpbf
Description
30v Single N-channel Hexfet Power Mosfet In A D-pak Package
Manufacturer
International Rectifier Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR3709ZCPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFR3709ZCPBF
Manufacturer:
IR
Quantity:
12 500
Applications
l
l
l
l
l
l
Benefits
www.irf.com
Notes  through
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJC
θJA
θJA
and Current
@ T
@ T
for Telecom and Industrial Use
Converters with Synchronous Rectification
High Frequency Synchronous Buck
High Frequency Isolated DC-DC
Lead-Free
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
@T
@T
Converters for Computer Processor Power
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
are on page 11
at 4.5V V
Parameter
Parameter
GS
GS
GS
@ 10V
@ 10V
IRFR3709ZCPbF
IRFU3709ZCPbF
V
30V
DSS
Typ.
300 (1.6mm from case)
–––
–––
–––
-55 to + 175
IRFR3709ZCPbF
HEXFET Power MOSFET
R
Max.
86
61
0.53
± 20
340
30
79
39
DS(on)
D-Pak
f
f
6.5m
Max.
110
1.9
50
max
IRFU3709ZCPbF
I-Pak
17nC
Units
Units
W/°C
°C/W
Qg
04/20/06
°C
W
V
A
1

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irfr3709zcpbf Summary of contents

Page 1

... GS @ 10V GS 300 (1.6mm from case) Typ. ––– gà ––– ––– HEXFET Power MOSFET R max Qg DS(on) 6.5m 17nC I-Pak D-Pak IRFU3709ZCPbF IRFR3709ZCPbF Max. Units 30 V ± 340 0.53 W/°C - 175 °C Max. ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

VGS TOP 10V 5.0V 1000 4.5V 3.5V 3.0V 2.7V 100 2.5V BOTTOM 2.25V 10 1 2.25V 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 15. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery Current - + D.U.T. V ...

Page 8

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

Page 9

5 www.irf.com ,5)5 $   ,5)5   9 ...

Page 10

5 10 ,5)8 $   ,5)8   www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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