irfr3707zcpbf International Rectifier Corp., irfr3707zcpbf Datasheet

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irfr3707zcpbf

Manufacturer Part Number
irfr3707zcpbf
Description
30v Single N-channel Hexfet Power Mosfet In A D-pak Package
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR3707ZCPBF
Manufacturer:
IR
Quantity:
12 500
Applications
l
l
l
l
l
l
Benefits
www.irf.com
Notes  through
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJC
θJA
θJA
and Current
@ T
@ T
for Telecom and Industrial Use
Converters with Synchronous Rectification
High Frequency Synchronous Buck
High Frequency Isolated DC-DC
Lead-Free
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
@T
@T
Converters for Computer Processor Power
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
are on page 11
at 4.5V V
Parameter
Parameter
GS
GS
GS
@ 10V
@ 10V
V
30V
DSS
Typ.
–––
–––
–––
300 (1.6mm from case)
IRFR3707ZCPbF
IRFU3707ZCPbF
-55 to + 175
HEXFET Power MOSFET
IRFR3707ZCPbF
R
Max.
56
39
0.33
± 20
220
30
50
25
DS(on)
f
f
D-Pak
9.5m
Max.
110
3.0
50
max
IRFU3707ZCPbF
I-Pak
9.6nC
Units
Units
W/°C
°C/W
Qg
06/22/06
°C
W
V
A
1

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irfr3707zcpbf Summary of contents

Page 1

... GS 300 (1.6mm from case) Typ. ––– gà ––– ––– IRFR3707ZCPbF IRFU3707ZCPbF HEXFET Power MOSFET R max Qg DS(on) 9.5m 9.6nC I-Pak D-Pak IRFU3707ZCPbF IRFR3707ZCPbF Max. Units 30 V ± 220 0.33 W/°C °C - 175 Max. ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

VGS TOP 10V 6.0V 1000 4.5V 4.0V 3.3V 100 2.8V 2.5V BOTTOM 2. 0.1 2.2V 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 15. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery Current - + D.U.T. V ...

Page 8

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

Page 9

5 www.irf.com ,5)5 $   ,5)5   9 ...

Page 10

5 10 ,5)8 $   ,5)8   www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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