irf7478qpbf International Rectifier Corp., irf7478qpbf Datasheet - Page 2

• Manufacturer Part Number: irf7478qpbf
• Description: 60v Single N-channel Hexfet Power Mosfet In A So-8 Package
• Manufacturer: International Rectifier Corp.

Diode Characteristics
IRF7478QPbF
Dynamic @ T
Static @ T
Symbol
E
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
I
I
AR
SM
d(on)
d(off)
S
rr
DSS
r
f
GSS
fs
AS
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
rr
2
g
gs
gd
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Static Drain-to-Source On-Resistance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
60
17
–––
–––
–––
–––
–––
1740 –––
1590 –––
0.065 –––
100
–––
–––
–––
–––
–––
––– -100
–––
300
220
410
–––
–––
–––
4.3
9.6
7.7
2.6
20
23
21
44
13
37
52
–––
100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
1.3
3.0
2.3
26
30
20
31
78
56
mΩ
V/°C
nC
µA
nA
nC
ns
pF
ns
V
V
S
V
Typ.
–––
–––
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ƒ
Reference to 25°C, I
I
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 4.2A
= 25°C, I
= 25°C, I
= 4.2A
= 6.2Ω
= V
= 48V, V
= 48V, V
= 50V, I
= 48V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 30V
= 10V ƒ
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
D
GS
GS
Conditions
Conditions
= 4.2A, V
= 4.2A
= 250µA
= 4.2A
= 4.2A
= 3.5A
= 0V to 48V …
Max.
= 1.0V, ƒ = 1.0MHz
= 48V, ƒ = 1.0MHz
140
= 0V
= 0V, T
4.2
D
www.irf.com
= 1mA
GS
ƒ
J
ƒ
= 125°C
G
= 0V ƒ
Units
mJ
A
S
D