ba782s-v Vishay, ba782s-v Datasheet - Page 2
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ba782s-v
Manufacturer Part Number
ba782s-v
Description
Band Switching Diodes
Manufacturer
Vishay
Datasheet
1.BA782S-V.pdf
(5 pages)
BA782S-V/BA783S-V
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Leakage current
Dynamik forward resistance
Diode capacitance
Series inductance across case
amb
amb
Figure 2. Dynamic Forward Resistance vs. Forward Current
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
18798
Parameter
20330
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
0
1
0.1
1
Figure 1. Diode Capacitance
T
amb
BA782S-V
100 MHz
= 25 °C
V
R
I
F
- Reverse Voltage (V)
- Forward Current (mA)
1
BA783S-V
100 MHz
I
V
f = (50 to 1000) MHz, I
f = (50 to 1000) MHz, I
V
V
10
F
R
R
R
= 100 mA
BA782S-V, BA783S-V
= 20 V
= 1 V, f = 1 MHz
= 3 V, f = 1 MHz
T
10
j
f = 1 MHz
1 kHz
= 25 °C
Test condition
100
100
F
F
= 10 mA
= 3 mA
BA782S-V
BA783S-V
BA782S-V
BA783S-V
BA782S-V
BA783S-V
Part
Symbol
C
C
C
V
L
I
r
r
r
r
R
S
F
f
f
f
f
D
D
D
Min
Typ.
2.5
Document Number 85709
Rev. 1.5, 15-Sep-06
1000
1.25
Max
0.7
1.2
0.5
0.9
1.5
1.2
50
Unit
mV
nA
nH
pF
pF
pF
Ω
Ω
Ω
Ω