S10604 Hamamatsu Photonics, K.K.,, S10604 Datasheet - Page 4

• Manufacturer Part Number: S10604
• Description: Photo Ics
• Manufacturer: Hamamatsu Photonics, K.K.,

4
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Figure 2 shows photocurrent vs. reverse voltage characteristics (light source: LED) measured using the circuit shown in Figure 1.
Output curves are plotted at different illuminance levels equivalent to a standard source A. The output curves start rising at a
reverse voltage of approx. 0.7 V (rising voltage).
Photo IC diode contains an internal resistance of approx. 150
photo IC diode is the sum of Vbe (ON) and the voltage drop across the protective resistance Rin.
The voltage drop (V
Figure 2.
In Figure 2, the intersections between the output curves and load lines indicate the saturation region. Maximum detectable light
levels can be estimated from this saturation point. Since the maximum detectable light level is determined by the power supply
voltage (Vcc) and load resistance (R
Note: Vbe (ON) and internal protection resistance have a respective temperature dependence of approximately -2 mV/°C and 0.1 %/°C.
Figure 1 Measurement circuit
Figure 2 Photocurrent vs. reverse voltage
V
V
Operating voltage, output characteristics
RISING VOLTAGE
R
L
PHOTO IC
DIODE
= Vcc - I × R
= Vbe (ON) + I × Rin ............ (1)
5.0
4.0
3.0
2.0
1.0
I
0
0
SATURATION
REGION
APPROX. 650 lx
SATURATION
REGION
APPROX. 1260 lx
R
(EXTERNAL RESISTANCE)
L
L
............ (2)
Rin=150
(INTERNAL PROTECTION RESISTANCE)
Vbe (ON)=0.7 V
(PHOTODIODE, CURRENT AMPLIFIER)
1
L
) caused by the external resistance is expressed by the following equation and is shown as load lines in
REVERSE VOLTAGE (V)
LOAD LINE
Vcc=5 V, R
INTERNAL PROTECTIVE RESISTANCE
Rin: APPROX. 150
2
LOAD LINE
Vcc=3 V, R
L
=1 k
3
L
=1 k
L
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
), change them to meet the required operating conditions.
(Typ. Ta=25 ˚C)
4
1600 lx
1150 lx
1380 lx
880 lx
600 lx
300 lx
5
KPICB0107EA
Vcc
KPICC0128EA
to protect against excessive current. The reverse voltage V
Photo IC diode
S10604
Cat. No. KSPD1069E03
Dec. 2007 DN
R
of a