S10341 Hamamatsu Photonics, K.K.,, S10341 Datasheet
S10341
Related parts for S10341
S10341 Summary of contents
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... Breakdown voltage Temperature coeffi cient Dark current Cut-off frequency Terminal capacitance Excess noise fi gure Gain Si APD S10341 series Low bias operation, for 800 nm band, small package Applications t mm Optical rangefi nder Laser radar FSO (free space optics) ...
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... Si APD Spectral response (Typ. Ta=25 ° M= 200 400 600 800 Wavelength (nm) Dark current vs. reverse voltage Reverse voltage (V) S10341 series Quantum efficiency vs. wavelength =800 nm) λ 100 M=100 200 1000 KAPDB0020EC Gain vs. reverse voltage ˚ 10000 1000 -20 °C 100 ...
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... Time (s) S10341 series Excess noise factor vs. gain 25 °C, f=1 MHz 150 1 KAPDB0193EB · After unpacking, store this device in an environment at a temperature of 30 °C and a humidity below 60%, and perform reflow soldering on this device within 24 hours. ...
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... Si APD Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.2 mm ≤ * S10341 series KAPDA0130EA 4 Cat. No. KAPD1030E01 May 2011 DN ...