asm3p2812ag-08tt PulseCore Semiconductor, asm3p2812ag-08tt Datasheet - Page 4

• Manufacturer Part Number: asm3p2812ag-08tt
• Description: Low Power Emi Reduction Ic
• Manufacturer: PulseCore Semiconductor

April 2008
rev 1.6
Operating Conditions
DC Electrical Characteristics
AC Electrical Characteristics
Symbol
* t
Symbol
Symbol
VDD
LH
Z
VDD
I
I
V
V
V
t
f
V
XOH
I
I
t
t
C
XOL
I
I
T
C
CC
DD
ON
OUT
OUT
t
f
LH
HL
IH
t
and t
IL
OH
OL
JC
IH
IN
IL
D
IN
A
L
*
*
HL
are measured into a capacitive load of 10pF
Input low voltage
Input high voltage
Input low current
(Inputs D_C, SRS and FRS are pulled high internally)
Input high current
XOUT Output low current
(V
XOUT Output high current
(V
Output low voltage (V
Output high voltage (V
Dynamic supply current (Unloaded Output)
Static supply current , Standby mode
Operating voltage
Power up time (first locked clock cycle after power up)
Clock out impedance
Voltage on any pin with respect to GND
Operating temperature
Load Capacitance
Input Capacitance
Input frequency for ASM3P2811/12/13/14 A/B
Output frequency for ASM3P2811A/B
Output frequency for ASM3P2812A/B
Output frequency for ASM3P2814A/B
Output rise time (measured at 0.8V to 2.0V)
Output fall time (measured at 2.0V to 0.8V)
Cycle to Cycle Jitter (Unloaded Output)
Output duty cycle
(CLKIN pulled to GND)
XOL
XOH
@ 0.4V, V
@ 2.5V, V
DD
DD
= 3.3V)
= 3.3V)
Notice: The information in this document is subject to change without notice.
Parameter
DD
Parameter
DD
= 3.3V, I
= 3.3V, I
Parameter
Low Power EMI Reduction IC
OL
OH
= 5mA)
= -5mA)
VSS – 0.3
Min
Min
2.5
3.0
0.5
0.8
10
10
20
40
45
2
8
±250
Typ
Typ
Min
3.3
0.9
1.0
3.0
-40
50
76
ASM3P2811A/B
ASM3P2812A/B
ASM3P2814A/B
V
DD
Max
Max
Max
500
+85
160
0.8
-50
0.4
4.5
3.6
3.6
1.2
1.3
50
18
55
10
40
40
80
3
3
4 of 11
7
+ 0.3
Unit
Unit
Unit
MHz
MHz
MHz
MHz
mA
mA
mA
mA
µA
µA
µS
°C
pF
pF
nS
nS
pS
V
V
V
V
V
V
Ω
%