bd139-6 New Continental Device India Limited, bd139-6 Datasheet - Page 2

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bd139-6

Manufacturer Part Number
bd139-6
Description
Npn Epitaxial Silicon Power Transistors
Manufacturer
New Continental Device India Limited
Datasheet
NPN EPITAXIAL SILICON POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS (T
DESCRIPTION
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
*Pulse test:- Pulse width=300 s, duty cycle=2%
E
C
B
Continental Device India Limited
c
=25ºC unless specified otherwise)
*h
SYMBOL
*V
FE
*V
CE (sat)
Group
BE(on)
Data Sheet
TEST CONDITION
I
I
C
*I
C
=0.15A, V
=0.5A, I
C
=0.5A, V
- 10
- 16
- 25
- 6
B
=0.05A
CE
CE
=2V
=2V
MIN
100
160
40
63
BD135 BD137
BD139
TO126
Plastic Package
MAX
100
160
250
400
0.5
1.0
Page 2 of 4
UNIT
V
V

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