bub323 ON Semiconductor, bub323 Datasheet - Page 3

• Manufacturer Part Number: bub323
• Description: Npn Silicon Power Darlington
• Manufacturer: ON Semiconductor

a special high voltage driving circuit. During an
auto–protect cycle, the transistor is turned on again as soon
as a voltage, determined by the zener threshold and the
network, is reached. This prevents the transistor from going
into a Reverse Bias Operating limit condition. Therefore, the
device will have an extended safe operating area and will
always appear to be in “FBSOA.” Because of the built–in
zener and associated network, the I
an unfamiliar shape compared to standard products as
shown in Figure 1. .
By design, the BU323Z has a built–in avalanche diode and
Figure 1. I
C
= f(V
CE
) Curve Shape
C
= f(V
CE
Figure 3. Forward Bias Safe Operating Area
) curve exhibits
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BUB323Z
3
the inductance, are applied according to the Device Under
Test (DUT) specifications. V
test system while making sure the load line remains within
the limits as described in Figure 4. .
tested, per the test circuit and criteria described in Figures 2.
and 4. , to the minimum guaranteed repetitive energy, as
specified in the device parameter section. The device can
sustain this energy on a repetitive basis without degrading
any of the specified electrical characteristics of the devices.
The units under test are kept functional during the complete
test sequence for the test conditions described:
I
R
C(peak)
BE
The bias parameters, V
Note: All BU323Z ignition devices are 100% energy
= 100 , V
= 7.0 A, I
Figure 2. Basic Energy Test Circuit
gate
C
H = 5.0 A, I
= 280 V, L = 8.0 mH
CLAMP
CE
C
and I
L = 100 mA, I
, I
B1
, V
C
are monitored by the
BE(off)
, I
B
B2
= 100 mA,
, I
C
, and