bf776 Infineon Technologies Corporation, bf776 Datasheet - Page 3

• Manufacturer Part Number: bf776
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Infineon Technologies Corporation

1
2
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
I
Power gain, maximum stable
I
Z
Power gain, maximum available
I
Z
Transducer gain
I
f = 1.8 GHz
f = 6 GHz
Third order intercept point at output
V
1dB Compression point at output
I
C
C
C
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 ), G ms = | S 21e / S 12e |
IP3 value depends on termination of all intermodulation frequency components.
L
L
CB
CE
EB
CE
= 30 mA, V
= 5 mA, V
= 5 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 3 V, f = 1 MHz, V
= 3 V, f = 1 MHz, V
= 3 V, I
Lopt
Lopt
, f = 6 GHz
, f = 1.8 GHz
C
CE
CE
CE
CE
CE
CE
= 30 mA, Z
CE
= 3 V, f = 1.8 GHz, Z
= 3 V, f = 6 GHz, Z
= 3 V, f = 1 GHz
= 3 V, Z
= 3 V, Z
= 3 V, Z
= 3 V, Z
BE
BE
S
S
S
S
S
CB
=Z
=Z
= 0 ,
= 0 ,
= Z
= Z
= Z
= 0 ,
1)
L
L
=50
=50
Sopt
Sopt
L
A
1)
= 50
= 25°C, unless otherwise specified
,
,
S
2)
,
,
f
f
S
= Z
=
=
,
= Z
1
1
Sopt
.
.
8 GHz
8 GHz
Sopt
3
Symbol
f
C
C
C
F
G
G
|S
IP
P
T
-1dB
cb
ce
eb
ms
ma
21e
3
|
2
min.
30
-
-
-
-
-
-
-
-
-
-
-
Values
10.5
26.5
0.09
0.23
12.5
typ.
0.5
0.8
1.3
21
40
24
13
2007-04-20
max.
0.2
-
-
-
-
-
-
-
-
-
-
-
BF776
Unit
GHz
pF
dB
dB
dB
dB
dBm