tn3012l Vishay, tn3012l Datasheet

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tn3012l

Manufacturer Part Number
tn3012l
Description
N-channel 300-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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TN3012L
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TN3012L
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TN3012L
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Notes
a.
Document Number: 70206
S-04279—Rev. C, 16-Jul-01
PRODUCT SUMMARY
FEATURES
D Low On-Resistance: 9 W
D Secondary Breakdown Free: 320 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
V
Pulse width limited by maximum junction temperature.
(BR)DSS
300
Min (V)
a
J
= 150_C)
r
DS(on)
20 @ V
12 @ V
_
Parameter
GS
GS
N-Channel 300-V (D-S) MOSFET
Max (W)
= 4.5 V
= 10 V
BENEFITS
D Low Offset Voltage
D Full-Voltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
G
S
D
“Run-Away”
A
V
TO-226AA
Top View
GS(th)
(TO-92)
= 25_C UNLESS OTHERWISE NOTED)
0.8 to 3
1
2
3
(V)
T
T
T
T
A
A
A
A
= 25_C
= 100_C
= 25_C
= 100_C
I
D
0.18
(A)
Symbol
APPLICATIONS
D High-Voltage Drivers: Relays, Solenoids,
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
“S” = Siliconix Logo
xxyy = Date Code
T
R
Device Marking
J
V
V
I
P
, T
DM
thJA
I
Lamps, Hammers, Displays, Transistors, etc.
DS
GS
D
D
Front View
stg
3012L
“S” TN
xxyy
–55 to 150
Limit
Vishay Siliconix
"20
0.18
0.14
0.32
300
156
0.5
0.8
TN3012L
www.vishay.com
Unit
_C/W
_C
W
V
A
11-1

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tn3012l Summary of contents

Page 1

... Siliconix Logo xxyy = Date Code D 3 Top View = 25_C UNLESS OTHERWISE NOTED) A Symbol T = 25_C 100_C 25_C 100_C TN3012L Vishay Siliconix Lamps, Hammers, Displays, Transistors, etc. Front View “S” TN 3012L xxyy Limit V 300 DS V " 0.14 I 0 ...

Page 2

... TN3012L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-Resistance b Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance ...

Page 3

... T – Junction Temperature (_C) J Document Number: 70206 S-04279—Rev. C, 16-Jul-01 = 25_C UNLESS OTHERWISE NOTED 100 125 150 TN3012L Vishay Siliconix Transfer Characteristics 1.0 25_C T = –55_C A 0.8 125_C 0.6 0.4 0 – Gate-to-Source Voltage (V) GS On-Resistance vs ...

Page 4

... TN3012L Vishay Siliconix TYPICAL CHARACTERISTICS (T Capacitance 200 160 120 80 C iss 40 C oss C rss – Drain-to-Source Voltage (V) DS Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com 11-4 = 25_C UNLESS OTHERWISE NOTED) ...

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