unr91a1g Panasonic Corporation of North America, unr91a1g Datasheet
unr91a1g
Manufacturer Part Number
unr91a1g
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR91A1G.pdf
(4 pages)
Transistors with built-in Resistor
UNR91A1G
Silicon PNP epitaxial planar type
For digital circuits
Features
Absolute Maximum Ratings T
Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2007
Optimum for high-density mounting and downsizing of the equipment
Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
a
= 25°C±3°C
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
V
V
T
P
CBO
I
T
Symbol
CEO
stg
V
C
R
T
j
V
V
I
I
I
V
V
1
h
CE(sat)
CBO
CEO
EBO
R
CBO
f
CEO
FE
OH
OL
/ R
T
1
2
–55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
–50
–50
–80
125
125
CB
CE
EB
CE
CC
CC
CB
= -10 mA, I
= -2 mA, I
= -10 mA, I
= -50 V, I
= -6 V, I
= -10 V, I
= -50 V, I
= -5 V, V
= -5 V, V
= -10 V, I
SJH00224AED
C
B
E
Unit
mW
Conditions
B
B
B
C
mA
E
E
B
= 0
°C
°C
= 0
V
V
= 0
= - 0.5 V, R
= - 2.5 V, R
= 0
= 0
= -5 mA
= 1 mA, f = 200 MHz
= - 0.3 mA
L
L
= 1 kW
= 1 kW
Package
Marking Symbol: CE
Internal Connection
Code
Pin Name
SSMini3-F3
1: Base
2: Emitter
3: Collector
—30%
-4.9
Min
-50
-50
0.8
35
B
R
R
Typ
1
1.0
2
10
80
- 0.25
+30%
- 0.1
- 0.5
- 0.5
- 0.2
Max
1.2
C
E
MHz
Unit
mA
kW
mA
mA
V
V
V
V
V
1
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unr91a1g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR91A1G Silicon PNP epitaxial planar type For digital circuits Features Optimum for high-density mounting and downsizing of the equipment Contribute to low power consumption Absolute Maximum Ratings T = 25° ...
Page 2
... I = −1 −80 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −60 − 0.4 mA − 0.3 mA −40 − 0.2 mA −20 − 0 −4 −8 Collector-emitter voltage V CE UNR91A1G_C - MHz T = 25° −1 −10 −10 2 Collector-base voltage V CB −10 2 SJH00224AED ...
Page 3
... This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 +0.05 1.60 − 0.03 +0.05 0.26 − 0. (0.50) (0.50) 1.00 ±0.05 (5°) Unit: mm SJH00224AED UNR91A1G +0.05 0.13 − 0.02 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...