unr5225g Panasonic Corporation of North America, unr5225g Datasheet

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unr5225g

Manufacturer Part Number
unr5225g
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors with built-in Resistor
UNR5225G, UNR5226G
Silicon NPN epitaxial planar type
For muting
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2007
• Low collector-emitter saturation voltage V
• The use with high current value is possible
• UNR5225G
• UNR5226G
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
ON resistance
Transition frequency
muting circuit
2. * : Refer to R
Parameter
Parameter
Marking symbol
*
UNR5226G
UNR5225G
UNR5226G
UNR5225G
on
FY
FZ
measurement circuit
This product complies with the RoHS Directive (EU 2002/95/EC).
4.7 kΩ
10 kΩ
(R
a
Symbol
Symbol
V
1
= 25°C ± 3°C
V
V
V
V
V
V
I
I
)
T
CE(sat)
R
h
CBO
P
EBO
R
CBO
I
T
CBO
f
CEO
EBO
CEO
EBO
a
stg
FE
C
T
on
T
j
1
= 25°C
CE(sat)
−55 to +150
(R
Rating
I
I
I
V
V
V
I
V
V
600
150
150
C
C
E
C
, optimum for the
2
30
20
CB
EB
CE
I
CB
5
)
= 1 µA, I
= 1 µA, I
= 1 mA, I
= 50 mA, I
= 7 V, R
SJH00220AED
= 5 V, I
= 5 V, I
= 10 V, I
= 30 V, I
L
E
C
B
Conditions
C
C
Unit
mW
mA
E
= 1 kΩ, f = 1 kHz
°C
°C
= 0
= 0
B
E
V
V
V
= 0
= 0
= 50 mA
= −50 mA, f = 200 MHz
= 0
= 2.5 mA
■ Package
■ Internal Connection
• Code
• Pin Name
SMini3-F2
1: Base
2: Emitter
3: Collector
B
−30%
Min
100
30
20
5
R
R
1
2
0.95
Typ
200
4.7
1.5
10
+30%
Max
600
80
C
E
1
1
MHz
Unit
mV
µA
µA
kΩ
V
V
V
1

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unr5225g Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting ■ Features • Low collector-emitter saturation voltage V muting circuit • The use with high current value is possible ■ Resistance by Part Number Marking symbol • ...

Page 2

... Common characteristics chart  250 200 150 100 120 160 ( °C ) Ambient temperature T a Characteristics charts of UNR5225G  400 = 25° 1.0 mA 300 B 0.9 mA 0.8 mA 200 0.7 mA 0.6 mA 0.5 mA 0.4 mA 100 0.3 mA 0 2.5 5.0 7 ...

Page 3

... Collector current I C  25° −1 10 −2 10 −3 10 0.25 0.75 1. Input voltage V IN SJH00220AED UNR5225G, UNR5226G  0 25° −1 10 −3 −2 − Output current I O  ...

Page 4

... This product complies with the RoHS Directive (EU 2002/95/EC). UNR5225G, UNR5226G SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) 4 Unit: mm 0.13 SJH00220AED +0.05 − 0.02 ...

Page 5

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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