tpd-1c12 Roithner LaserTechnik GmbH, tpd-1c12 Datasheet

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tpd-1c12

Manufacturer Part Number

tpd-1c12

Description

Ingaas Pin Photodiode Chip

Manufacturer

Roithner LaserTechnik GmbH

Datasheet

1.TPD-1C12.pdf (1 pages)

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TPD-1C12

InGaAs PIN photodiode chip

FEATURES:

• Optimized for fiber optic application.

• Low dark current and low capacitance.

ELECTRO-OPTICAL CHARACTERISTICS:

PARAMETERS

Responsivity

Forward Current

Dark Current

Breakdown Voltage

Capacitance

Fig. 1 Typical Dark Current and Forward Current

Fig. 3 Typical Breakdown Curve

OUTLINE DIAGRAM:

• Chip size is typical 250x250 m square.

• Sensitive area is typical 100 m in diameter.

1E-10

1E-11

1E-12

1E-13

1E-10

1E-3

1E-4

1E-5

1E-6

1E-7

1E-8

1E-9

1E-3

1E-4

1E-5

1E-6

1E-7

1E-8

1E-9

-6

0

5

-5

10

15

-4

20

-3

25

Reverse Bias (V)

Voltage (V)

30

-2

35

40

-1

45

0

50

55

1

60

SYMBOL

65

2

V

70

I

I

R

C

BD

D

F

MIN

100

TYP

0.9

0.2

0.9

55

Fig. 2 Typical Photo-Current

Fig. 4 Typical C-V Curve

-0.00001

-0.00002

-0.00003

-0.00004

0.00004

0.00003

0.00002

0.00001

0.00000

1.5

1.4

1.3

1.2

1.1

1.0

0.9

MAX

-6

1

1

0

-5

-4

2

-3

UNIT

A/W

Reverse Bias (V)

nA

pF

V

4

Voltage (V)

A

-2

-1

6

V

V

V

I

V

TEST CONDITIONS

0

R

R

F

R

R

=10 A

8

=1V

=5V, =1300nm

=5V

=5V, f=1 MHz

1

10

2

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