lt4544c Lite-On Power Semiconductor, lt4544c Datasheet

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lt4544c

Manufacturer Part Number
lt4544c
Description
N- And P-channel 30-v Power Mosfet
Manufacturer
Lite-On Power Semiconductor
Datasheet
Rev 1. Sep. 2009
Nov, 2007-Ver4.0
N- and P-Channel 30-V Power MOSFET
GENERAL DESCRIPTION
The LT4544C is the N- and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
Absolute Maximum Ratings (T
*The device mounted on 1in2 FR4 board with 2 oz copper
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(Tj=150℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Parameter
Top View
(SOP-8)
T
T
T
T
A
A
A
A
A
*
=25℃
=70℃
=25℃
=70℃
=25℃ Unless Otherwise Noted)
*
Symbol
V
R
V
R
I
P
T
DSS
GSS
I
DM
θJA
θJC
D
D
J
10 secs
1.67
2.6
7.6
6.1
48
N-Channel
FEATURES
● R
● R
● R
● R
● Super high density cell design for extremely low R
● Exceptional on-resistance and maximum DC current
APPLICATIONS
● Power Management
● DC/DC Converter
● LCD TV & Monitor Display inverter
● CCFL inverter
● LCD Display inverter
±20
30
30
50
capability
DS(ON)
DS(ON)
DS(ON)
DS(ON)
Steady State
1.6
4.8
78
1
6
≦28mΩ@V
≦42mΩ@V
≦60mΩ@V
≦90mΩ@V
-55 to 150
10 secs
GS
GS
GS
GS
-5.1
2.5
1.6
50
-4
=10V (N-Ch)
=4.5V (N-Ch)
=-10V (P-Ch)
=-4.5V (P-Ch)
P-Channel
±20
-30
-30
52
Steady State
LT4544C
0.99
-3.2
1.5
81
-4
℃/W
℃/W
Unit
W
V
A
DS(ON)
01

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lt4544c Summary of contents

Page 1

... N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION The LT4544C is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone ...

Page 2

... DS GS P-Channel V =15V, V =0V, f=1MHz =0V, V =0V, f=1MHz DS GS N-Channel V =15V, R =15Ω =1A, V =10V, R =6Ω D GEN G P-Channel V =-15V, R =15Ω =-1A, V =-10V,R =6Ω D GEN G LT4544C Min Typ N-Ch 1.0 1.5 P-Ch -1.0 -1.5 N-Ch P-Ch N-Ch P-Ch =55℃ N-Ch J =55℃ P-Ch J N-Ch 20 P-Ch -20 N-Ch 22 P-Ch 52 N-Ch 33 P-Ch 69 N-Ch 0.8 P-Ch -0.8 N-Ch 12 P-Ch 14 N-Ch ...

Page 3

... N- and P-Channel 30-V Power MOSFET Typical Characteristics (T Rev 1. Sep. 2009 Nov, 2007-Ver4.0 =25℃ Noted) N-CHANNEL J LT4544C 03 ...

Page 4

... N- and P-Channel 30-V Power MOSFET Typical Characteristics (T Rev 1. Sep. 2009 Nov, 2007-Ver4.0 =25℃ Noted) N-CHANNEL J LT4544C 04 ...

Page 5

... N- and P-Channel 30-V Power MOSFET Typical Characteristics (T Rev 1. Sep. 2009 Nov, 2007-Ver4.0 =25℃ Noted) P-CHANNEL J LT4544C 05 ...

Page 6

... N- and P-Channel 30-V Power MOSFET Typical Characteristics (T Rev 1. Sep. 2009 Nov, 2007-Ver4.0 =25℃ Noted) P-CHANNEL J LT4544C 06 ...

Page 7

... N- and P-Channel 30-V Power MOSFET NOTES: 1. PKG ALL SURFACES ARE Ra0.8-1.2um. 2. Mold flash, protrusions or gate burrs shall not exceed 0. total( both sides) . Rev 1. Sep. 2009 Nov, 2007-Ver4.0 SOP-8 Package Outline LT4544C 07 ...

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