sqm40n10-30 Vishay, sqm40n10-30 Datasheet - Page 4
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sqm40n10-30
Manufacturer Part Number
sqm40n10-30
Description
Automotive N-channel 100 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet
1.SQM40N10-30.pdf
(6 pages)
SQM40N10-30
Vishay Siliconix
TYPICAL CHARACTERISTICS T
THERMAL RATINGS T
www.vishay.com
4
50
40
30
20
10
2.5
2.0
1.5
1.0
0.5
0.0
Maximum Drain Current vs. Ambient Temperature
0
0
- 50 - 25
On-Resistance vs. Junction Temperature
V
I
D
25
GS
= 15 A
= 10 V
0
T
T
50
J
C
- Junction Temperature (°C)
- Case Temperature (°C)
25
75
A
50
= 25 °C, unless otherwise noted
100
75
100
125
130
125
120
115
110
105
100
Drain Source Breakdown vs. Junction Temperature
95
A
- 50 - 25
= 25 °C, unless otherwise noted
125
150
I
D
150
= 10 mA
175
175
0
T
J
- Junction Temperature (°C)
25
50
75
100
100
10
1000
1
100
0.1
0.00001
10
0
1
125
I
AV
150
Source Drain Diode Forward Voltage
(A) at T
0.0001
V
175
0.3
Avalanche Current vs. Time
SD
- Source-to-Drain Voltage (V)
A
T
J
= 150 °C
= 150 °C
0.001
0.6
t
in
I
AV
(s)
S09-1035-Rev. A, 08-Jun-09
(A) at T
Document Number: 64716
0.01
A
T
0.9
= 25 °C
J
= 25 °C
0.1
1.2
1