p2103hvg ETC-unknow, p2103hvg Datasheet
p2103hvg
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p2103hvg Summary of contents
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... Unless Otherwise Noted) C SYMBOL TEST CONDITIONS STATIC 0V, I (BR)DSS GS(th 0V, V GSS 24V DSS V = 20V P2103HVG G : GATE D : DRAIN S : SOURCE SYMBOL LIMITS ± 1 -55 to 150 j stg T 275 L MAXIMUM 62 ...
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... Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2 Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P2103HVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. Field Effect Transistor I V ...
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... NIKO-SEM Dual N-Channel Enhancement Mode TYPICAL PERFORMANCE CHARACTERISTICS Field Effect Transistor 3 P2103HVG SOP-8 Lead-Free Jun-29-2004 ...
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... NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor 4 P2103HVG SOP-8 Lead-Free Jun-29-2004 ...
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... Dual N-Channel Enhancement Mode SOIC-8(D) MECHANICAL DATA Dimension Min. A 4.8 3.8 B 5.8 C 0.38 0.445 D E 1. Field Effect Transistor mm Dimension Typ. Max. 4.9 5.0 H 3.9 4.0 I 6.0 6.2 J 0.51 K 1.27 L 1.55 1.75 M 0.175 0. P2103HVG mm Min. Typ. 0.5 0.715 0.18 0.254 0.22 0° 4° SOP-8 Lead-Free Max. 0.83 0.25 8° Jun-29-2004 ...