rt3tffm ISAHAYA ELECTRONICS CORPORRATION, rt3tffm Datasheet - Page 2

• Manufacturer Part Number: rt3tffm
• Description: Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS ( RTr1 )
V
I
h
V
V
V
R
R
f
PRELIMINARY
T
CBO
FE
1000
1000
(BR)CEO
CE(sat)
I(ON)
I(OFF)
1
2
Symbol
/R
100
100
10
10
1
0.0
1
V
V
CE
CE
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
COLLECTOR CURRENT IC (mA)
INPUT OFF VOLTAGE VI(OFF) (V)
=5V
=5V
DC FORWARD CURRENT GAIN
0.4
VS. COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
COLLECTOR CURRENT
0.8
10
Parameter
1.2
ISAHAYA ELECTRONICS CORPORATION
1.6
100
2.0
I
V
V
I
V
V
-
-
V
C
C
CB
CE
CE
CE
CE
=100μA,R
=10mA,I
=5V,I
=0.2V,I
=5V,I
=6V,I
=50V,I
C
C
E
=10mA
=100μA
=10mA
B
E
C
=0. 5mA
Test conditions
=0
=5mA
BE
=∞
0.1
10
1
1
VCE=0.2V
COLLECTOR CURRENT IC (mA)
VS. COLLECTOR CURRENT
RTr1
RTr2
INPUT ON VOLTAGE
Composite Transistor With Resistor
Min
0.8
3.3
0.8
10
50
20
-
-
-
-
-
For Switching Application
RT3TFFM
Silicon Epitaxial Type
Limits
Typ
200
150
1.4
1.1
4.7
1.0
-
-
-
-
Max
0.1
0.3
2.3
6.1
1.2
-
-
-
-
-
100
MH
Unit
μA
kΩ
V
V
V
V
-
-
Z