rt3xbbm ISAHAYA ELECTRONICS CORPORRATION, rt3xbbm Datasheet
rt3xbbm
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rt3xbbm Summary of contents
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... DESCRIPTION RT3XBBM is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor ( R1=10 KΩ) ●Mini package for easy mounting APPLICATION muting circuit、switching circuit MAXIMUM RATINGS （Ta=25℃）（RTr1、RTr2） Symbol Parameter V Collector to Base voltage CBO V Emitter to Base voltage ...
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... =10mA , I =0.5mA =10V, I =-10mA, f=100MHz =7V, f=1MHz I 1000 100 10 100 1000 ISAHAYA ELECTRONICS CORPORATION RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type Limits Min Typ 820 0.94 COLLECTOR CURRENT VS. INPUT OFF VOLTAGE VCE=5V 0 0.2 0.4 0.6 ...
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... Ta=-40℃ 10 25℃ 75℃ 1 0.1 100 1000 0.1 ISAHAYA ELECTRONICS CORPORATION RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type DC REVERSE CURRENT GAIN VS. COLLECTOR CURRENT VEC=5V 75℃ 25℃ Ta=-40℃ 100 COLLECTOR CURRENT IC (mA) ON RESISTANCE VS. INPUT VOLTAGE f=1kHz RL=1kΩ ...
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Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...