s2744-09 Hamamatsu Photonics, K.K.,, s2744-09 Datasheet - Page 2

• Manufacturer Part Number: s2744-09
• Description: Si Pin Photodiode Large Area Sensors For Scintillation Detection
• Manufacturer: Hamamatsu Photonics, K.K.,

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Dimensional outlines (unit: mm)
100 nA
100 pA
10 nA
10 pA
S2744-08/-09
1 µA
1 nA
1 pA
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
200
-20
WHITE CERAMIC
S2744/S3588-09
AMBIENT TEMPERATURE (˚C)
400
0
2.0
PHOTOSENSITIVE
SURFACE
WAVELENGTH (nm)
600
20
S2744/S3588-08
20.0
27.0
ACTIVE AREA
LEAD
y0.45
+0
-
0.6
800
40
(Typ. Ta=25 ˚C)
(Typ. V
2.5
1000
60
R
=70 V)
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
1200
80
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
KPINB0265EB
KPINB0221EA
100 pF
10 nF
10 pF
1 nF
+1.5
+1.0
+0.5
-0.5
0
200
0.1
Si PIN photodiode
KPINA0039EB
400
REVERSE VOLTAGE (V)
WAVELENGTH (nm)
1
600
S3588-08/-09
(Typ. Ta=25 ˚C, f=1 MHz)
S2744-08/-09
800
10
S3588-08/-09
1000
WHITE CERAMIC
(Typ.)
1.2
100
KPINB0093EC
KPINB0222EB
S2744/S3588-08, -09
PHOTOSENSITIVE
SURFACE
34.0
ACTIVE AREA
30.0
+0
-
0.8
LEAD
y0.45
100 pA
10 nA
10 pA
1 nA
1 pA
0.1
1.1
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
REVERSE VOLTAGE (V)
1
10
Cat. No. KPIN1049E04
Mar. 2006 DN
(Typ. Ta=25 ˚C)
KPINA0042EB
100
KPINB0220EA