s4276-03 Hamamatsu Photonics, K.K.,, s4276-03 Datasheet - Page 2

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s4276-03

Manufacturer Part Number
s4276-03
Description
Si Pin Photodiode
Manufacturer
Hamamatsu Photonics, K.K.,
Datasheet
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
CATHODE
Reference
Dark current vs. reverse voltage
Dimensional outlines [unit: mm, tolerance unless otherwise noted: ±0.2, material of PCB: G10 (black)]
T. MOTOBAYASHI, et al., “PARTICLE IDENTIFICATION OF HEAVY IONS WITH LARGE SILICON DETECTORS”, Nucl. Instr.
Meth. A284 (1989) 526-528
o
ACTIVE AREA
28.0
50
40
30
20
10
0
0
20
3.0
40
S5377-05
REVERSE VOLTAGE
60
44.0 ± 0.2
(4 ×) R1.0
80
S5377 series
100 120 140 160 180
S5377-02
PROTECTION RESIN
FOR AI WIRE
(Typ. Ta=25 ˚C)
(V)
RESIN FOR
FIXING OF CHIP
ANODE
CATHODE
HOLE
(4 ×)
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
2.3 ± 0.1
200
KPINB0235EA
KSPDA0023EC
Si PIN photodiode
1.6
o
ACTIVE AREA
HOLE
(4 ×)
48
Terminal capacitance vs. reverse voltage
1000
900
800
700
600
500
400
300
200
100
2.3 ± 0.1
0
0
20
2.75
40
S5377/S4276 series
ANODE
REVERSE VOLTAGE
60
S5377-05
56.0 ± 0.2
80 100
S4276 series
CATHODE ANODE
11.0
(4 ×) R1.0
120 140 160 180 200
S5377-02
(Typ. Ta=25 ˚C)
(V)
CATHODE
KPINB0236EA
WIRE
PROTECTION
RESIN
Cat. No. KPIN1058E01
Mar. 2001 DN
3.0 MAX.
1.6
KSPDA0024EB

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