ssf2715 Silikron Semiconductor Co.,LTD., ssf2715 Datasheet

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ssf2715

Manufacturer Part Number
ssf2715
Description
Extremely High Dv/dt Capability Low Gate Charge Qg Results In Simple Drive Requirement 100% Avalanche Tested Gate Charge Minimized Very Low Intrinsic Capacitances Very Good Manufacturing Repeatability
Manufacturer
Silikron Semiconductor Co.,LTD.
Datasheet
Features
Description
N–Channel enhancement mode power MOSFETs and
is obtained through an extreme optimization layout design,
in additional to pushing on-resistance significantly down,
special care is taken to ensure a very good dv/dt capability,
provide superior switching performance, withstand high
energy pulse in the avalanche, and i ncreases packing density.
Application
Absolute Maximum Ratings
I
I
I
P
V
E
I
E
dv/dt
T
T
Thermal Resistance
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@Tc=25 ْ C
@Tc=100ْ C
@T
SSF2715 is a new generation of high voltage
Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Extremely high dv/dt capability
Low Gate Charge Qg results in
High current, high speed switching
Lighting
Ideal for off-line power supply, adaptor, PFC
C
=25ْ C
Junction-to-case
Case-to-Sink,Flat,Greased Surface
Junction-to-Ambient
Continuous Drain Current,V
Continuous Drain Current,V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Parameter
Parameter
GS
GS
@10V
@10V
Min.
–55 to +150
Typ.
0.50
Max.
0.67
±30
120
8.5
4.5
20
80
5
3
5
Max.
1.56
62.5
V
I
R
SSF2715 TOP View (TO220)
D
DSS
DS(ON)
= 5A
SSF2715
= 500V
= 1.2Ω
Units
W/ ْ C
V/ns
mJ
mJ
Units
W
ْ C /W
ْ C
A
V
A
1

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ssf2715 Summary of contents

Page 1

... Very low intrinsic capacitances ■ Very good manufacturing repeatability ■ Description SSF2715 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and i ncreases packing density ...

Page 2

... I ≤5A,di/dt≤200A/μ TJ≤25 ْ C ④ Pulse width≤300μS; duty cycle≤2% SSF2715 Max. Units Test Conditions V V =0V,I 250μA — — V/ْ C Reference to 25ْ 1.2 Ω V =10V,I =2. ...

Page 3

... Typical Performance Characteristics Figure 1 On-Region Characteristics Figure 3 On-Resistance Variation vs. Drain Current and Gate Voltage Figure 5 Capacitance Characteristics Figure 2 Transfer Characteristics Figure 4 Body diode forward Voltage Variation vs. Source Current and temperature Figure 6 Gate Charge Characteristics SSF2715 3 ...

Page 4

... Typical Performance Characteristics Figure 7 Breakdown Voltage Variation vs. Temperature Figure 9 Maximum Safe Operation Area Figure 12 Transient Thermal Response Curve SSF2715 Figure 8 On-Resistance Variation vs. Temperature Figure 10 Maximum Drain Current vs. Case Temperature 4 ...

Page 5

... Test Circuit and Waveform Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform SSF2715 5 ...

Page 6

... Mechanical Dimensions TO-220 SSF2715 6 ...

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