ssf2715 Silikron Semiconductor Co.,LTD., ssf2715 Datasheet
ssf2715
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ssf2715 Summary of contents
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... Very low intrinsic capacitances ■ Very good manufacturing repeatability ■ Description SSF2715 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and i ncreases packing density ...
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... I ≤5A,di/dt≤200A/μ TJ≤25 ْ C ④ Pulse width≤300μS; duty cycle≤2% SSF2715 Max. Units Test Conditions V V =0V,I 250μA — — V/ْ C Reference to 25ْ 1.2 Ω V =10V,I =2. ...
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... Typical Performance Characteristics Figure 1 On-Region Characteristics Figure 3 On-Resistance Variation vs. Drain Current and Gate Voltage Figure 5 Capacitance Characteristics Figure 2 Transfer Characteristics Figure 4 Body diode forward Voltage Variation vs. Source Current and temperature Figure 6 Gate Charge Characteristics SSF2715 3 ...
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... Typical Performance Characteristics Figure 7 Breakdown Voltage Variation vs. Temperature Figure 9 Maximum Safe Operation Area Figure 12 Transient Thermal Response Curve SSF2715 Figure 8 On-Resistance Variation vs. Temperature Figure 10 Maximum Drain Current vs. Case Temperature 4 ...
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... Test Circuit and Waveform Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform SSF2715 5 ...
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... Mechanical Dimensions TO-220 SSF2715 6 ...