ssf3637 Silikron Semiconductor Co.,LTD., ssf3637 Datasheet

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ssf3637

Manufacturer Part Number
ssf3637
Description
The Ssf3637 Uses Advanced Trench Technology To Provide Excellent Rds On , Low Gate Charge. It Has Been Optimized For Power Management Applications Requiring A Wide Range Of Gave Drive Voltage Ratings 4.5v ? 25v .
Manufacturer
Silikron Semiconductor Co.,LTD.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSF3637
Manufacturer:
SILIKRON
Quantity:
20 000
Part Number:
ssf3637S
Manufacturer:
SILIKRON
Quantity:
20 000
GENERAL FEATURES
●V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
PACKAGE MARKING AND ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
©Silikron Semiconductor CO.,LTD.
DESCRIPTION
The SSF3637 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It has
been optimized for power management applications
requiring a wide range of gave drive voltage ratings
(4.5V – 25V).
Application
●Battery protection
●Load switch
●Power management
Device Marking
R
R
DS
DS(ON)
DS(ON)
SSF3637
= -30V,I
< 52mΩ @ V
< 87mΩ @ V
D
= -5A
Parameter
GS
GS
=-10V
=-4.5V
SSF3637
Device
Parameter
Device Package
SOP-8
Symbol
BV
I
I
DSS
GSS
DSS
1
Reel Size
Ø330mm
V
V
V
GS
GS
DS
Condition
=0V I
=±20V,V
=-24V,V
Symbol
T
J
D
R
V
V
I
,T
P
=-250μA
I
DM
θJA
DS
GS
D
Marking and pin Assignment
G1
D
STG
GS
DS
http://www.silikron.com
=0V
=0V
Schematic diagram
D1
Tape width
SOP-8 top view
12mm
S1
G2
Min
-30
-55 To 150
Limit
62.5
±20
-30
-20
2.0
-5
S2
Typ
D2
SSF3637
2500 units
Quantity
Max
±100
-1
Unit
v1.0
W
V
V
A
A
/W
Unit
μA
nA
V

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ssf3637 Summary of contents

Page 1

... DESCRIPTION The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). GENERAL FEATURES ●V = -30V < 87mΩ =-4.5V DS(ON < 52mΩ ...

Page 2

... V =-15V =-10V,R =6Ω GEN d(off =-15V, I =-5A,V =-10V =0V,I =- http://www.silikron.com SSF3637 -1 -1 mΩ 700 PF 120 14 3 ...

Page 3

... Figure1:Switching Test Circuit Figure 3: Normalized Maximum Transient Thermal Impedan ©Silikron Semiconductor CO.,LTD. Vdd t t d(on) d(on Vout V V OUT OUT 10% 10% Square Wave Pluse Duration(sec) 3 SSF3637 off off d(off) d(off) 90% 90% 90% ...

Page 4

... Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 4 http://www.silikron.com SSF3637 v1.0 ...

Page 5

... It is possible that these or contained herein are 5 SSF3637 material damage. Consult with result from using products at should always evaluate and probabilistic failures could give subject to change without notice http://www.silikron.com ...

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