mbm29dl162td ETC-unknow, mbm29dl162td Datasheet

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mbm29dl162td

Manufacturer Part Number
mbm29dl162td
Description
Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit Dual Operation
Manufacturer
ETC-unknow
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mbm29dl162td-90PFTN
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
FUJITSU SEMICONDUCTOR
Embedded Erase
FLASH MEMORY
CMOS
16M (2M 8/1M 16) BIT
MBM29DL16XTD/BD
Ordering Part No.
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
FEATURES
• 0.33 m Process Technology
• Simultaneous Read/Write operations (dual bank)
• Single 3.0 V read, program, and erase
PRODUCT LINE UP
PACKAGES
DATA SHEET
Multiple devices available with different bank sizes (Refer to Table 1)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Minimizes system level power requirements
48-pin plastic TSOP (I)
(FPT-48P-M19)
TM
and Embedded Program
Part No.
Marking Side
V
V
CC
CC
= 3.3 V
= 3.0 V
TM
+0.3 V
–0.3 V
+0.6 V
–0.3 V
are trademarks of Advanced Micro Devices, Inc.
48-pin plastic TSOP (I)
Marking Side
(FPT-48P-M20)
-70/90/12
70
70
70
30
MBM29DL16XTD/MBM29DL16XBD
90
90
90
35
Dual Operation
48-pin plastic FBGA
(BGA-48P-M13)
DS05-20874-4E
120
120
12
50
(Continued)

Related parts for mbm29dl162td

mbm29dl162td Summary of contents

Page 1

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M 8/1M 16) BIT MBM29DL16XTD/BD FEATURES • 0.33 m Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program ...

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MBM29DL16XTD/BD (Continued) • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum ...

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GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices ...

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... MBM29DL16XTD/BD Table 1 Device Organization Part Number MBM29DL161TD/BD MBM29DL162TD/ MBM29DL163TD/BD MBM29DL164TD/BD 4 -70/90/12 MBM29DL16XTD/BD Device Bank Divisions Bank 1 Megabits Sector Sizes 0.5 Mbit Eight 8K byte/4K word Eight 8K byte/4K word, 2 Mbit three 64K byte/32K word Eight 8K byte/4K word, 4 Mbit seven 64K byte/32K word Eight 8K byte/4K word, ...

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PIN ASSIGNMENTS N. RESET 12 N.C. 13 WP/ACC 14 RY/BY ...

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MBM29DL16XTD/BD (Continued ...

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BLOCK DIAGRAM Bank 2 Address RESET State WE Control CE & OE Command BYTE Register WP/ACC Bank 1 Address MBM29DL16XTD/BD Cell Matrix (Bank ...

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MBM29DL16XTD/BD LOGIC SYMBOL RY/BY WE RESET BYTE WP/ACC 8 -70/90/12 Table 2 MBM29DL16XTD/BD Pin Configuration Pin Address Inputs -1 0 ...

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DEVICE BUS OPERATION Table 3 MBM29DL16XTD/BD User Bus Operations (BYTE = V Operation Auto-Select Manufacturer Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write (Program/Erase) Enable Sector Group Protection (2), (4) Verify Sector Group Protection (2), (4) ...

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MBM29DL16XTD/BD ABSOLUTE MAXIMUM RATINGS(See WARNING) Parameter Symbol Storage Temperature Tstg Ambient Temperature with Power Applied Voltage with respect to Ground All pins except OE, RESET (Note 1) Power Supply Voltage (Note OE, ...

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MAXIMUM OVERSHOOT +0.6 V –0.5 V –2.0 V Figure 1 Maximum Negative Overshoot Waveform +2.0 V Figure 2 Maximum Positive Overshoot Waveform 1 +14.0 V +13 +0 ...

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MBM29DL16XTD/BD ELECTRICAL CHARACTERISTICS 1. DC Characteristics Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current (Note Active Current (Note Current (Standby Current (Standby, ...

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Parameter Output Low Voltage Level Output High Voltage Level Low V Lock-Out Voltage CC Notes: 1. The I current listed includes both the DC operating current and the frequency dependent component active while Embedded Algorithm (program ...

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MBM29DL16XTD/ Characteristics • Read Only Operations Characteristics Parameter Symbols JEDEC Standard t t Read Cycle Time AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output ...

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Write/Erase/Program Operations Parameter Symbols JEDEC Standard t t Write Cycle Time AVAV Address Setup Time AVWL AS Address Setup Time to OE Low During — t ASO Toggle Bit Polling t t Address Hold Time WLAX ...

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MBM29DL16XTD/BD (Continued) Parameter Symbols JEDEC Standard — Setup Time to WE Active (Note 2) CSP — t Recover Time From RY/BY RB — t RESET Pulse Width RP — t RESET High Level Period before Read RH — ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Min. Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle 100,000 PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 ...

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MBM29DL16XTD/BD TIMING DIAGRAM • Key to Switching Waveforms Addresses Outputs Figure 5.1 AC Waveforms for Read Operations 18 -70/90/12 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from ...

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Addresses RESET High-Z Outputs Figure 5.2 AC Waveforms for Hardware Reset/Read Operations MBM29DL16XTD/ Addresses Stable t ACC t CE Output Valid -70/90/ ...

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MBM29DL16XTD/BD 3rd Bus Cycle Addresses 555H GHWL WE t A0H Data Notes address of the memory location to be programmed data to be programmed at byte ...

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Bus Cycle Addresses 555H GHEL Data A0H Notes address of the memory location to be programmed data to be programmed at ...

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MBM29DL16XTD/BD Addresses GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555H (Word), AAAH (Byte) for Chip Erase. Note: These waveforms are for the 16 mode. ...

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OEH WE Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation). 7 Figure 9 AC Waveforms for Data Polling ...

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MBM29DL16XTD/BD Address OEH /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded operation). 6 Figure 10 AC Waveforms for Toggle Bit I during Embedded ...

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Read Command t RC Address BA1 GHWL WE Valid DQ Output Note: This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1: Address of Bank 1. BA2: Address of ...

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MBM29DL16XTD/ RY/BY Figure 13 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY 26 -70/90/12 The rising edge of the last write pulse READY Figure 14 RESET, RY/BY Timing Diagram Entire programming or erase ...

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CE BYTE ELFH Figure 15 Timing Diagram for Word Mode Configuration CE BYTE t ELFL Figure 16 Timing Diagram for Byte ...

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MBM29DL16XTD/ SGAX VLHT ...

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VIDR t VCS RESET VLHT RY/BY Figure 19 Temporary Sector Group Unprotection Timing Diagram MBM29DL16XTD/BD Program or Erase Command Sequence Unprotection period -70/90/12 t VLHT VLHT 29 ...

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MBM29DL16XTD/ VCS t VLHT RESET t VIDR Add Data 60H SGAX : Sector Group Address to be protected SGAY : Next Sector Group Address to be protected TIME-OUT ...

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VACCR t VCS V ACC 3 V WP/ACC VLHT RY/BY Figure 21 Accelerated Program Timing Diagram MBM29DL16XTD/BD Program or Erase Command Sequence Acceleration period -70/90/12 t VLHT VLHT 31 ...

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MBM29DL16XTD/BD FLEXIBLE SECTOR-ERASE ARCHITECTURE Table 5.1 Sector Address Tables (MBM29DL161TD) Sector Address Bank Sector Bank Address SA0 SA1 SA2 SA3 0 ...

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Table 5.2 Sector Address Tables (MBM29DL161BD) Sector Address Bank Sector Bank Address SA38 SA37 SA36 SA35 ...

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... MBM29DL16XTD/BD Table 6.1 Sector Address Tables (MBM29DL162TD) Sector Address Bank Bank Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 ...

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Table 6.2 Sector Address Tables (MBM29DL162BD) Sector Address Bank Bank Sector Address SA38 SA37 SA36 SA35 ...

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MBM29DL16XTD/BD Table 7.1 Sector Address Tables (MBM29DL163TD) Sector Address Bank Sector SA0 SA1 SA2 SA3 SA4 ...

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Table 7.2 Sector Address Tables (MBM29DL163BD) Sector Address Bank Sector SA38 SA37 SA36 SA35 ...

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MBM29DL16XTD/BD Table 8.1 Sector Address Tables (MBM29DL164TD) Sector Address Bank Sector SA0 SA1 SA2 SA3 SA4 ...

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Table 8.2 Sector Address Tables (MBM29DL164BD) Sector Address Bank Sector SA38 SA37 SA36 SA35 ...

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MBM29DL16XTD/BD Table 9.1 Sector Group Addresses (MBM29DL16XTD) Sector Group SGA0 SGA1 SGA2 0 0 SGA3 0 1 SGA4 0 1 SGA5 1 0 SGA6 1 0 SGA7 1 ...

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Table 9.2 Sector Group Addresses (MBM29DL16XBD) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 SGA8 0 ...

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... The bank selection can be selected by bank address (A The MBM29DL161TD/BD have two banks which contain Bank 1 (8KB eight sectors) and Bank 2 (64KB The MBM29DL162TD/BD have two banks which contain Bank 1 (8KB eight sectors, 64KB The MBM29DL163TD/BD have two banks which contain Bank 1 (8KB ...

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Standby Mode There are two ways to implement the standby mode on the MBM29DL16XTD/BD devices, one using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is ...

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... IL identifier code (MBM29DL161TD = 36H and MBM29DL161BD = 39H for 8 mode; MBM29DL161TD = 2236H and MBM29DL161BD = 2239H for 16 mode), (MBM29DL162TD = 2DH and MBM29DL162BD = 2EH for 8 mode; MBM29DL162TD = 222DH and MBM29DL162BD = 222EH for 16 mode), (MBM29DL163TD = 28H and MBM29DL163BD = 2BH for 8 mode; MBM29DL163TD = 2228H and MBM29DL163BD = 222BH for 16 mode), (MBM29DL164TD = 33H and MBM29DL164BD = 35H for 8 mode ...

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... Table 11.3 MBM29DL162TD/BD Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code Byte MBM29DL162TD Word Device Code Byte MBM29DL162BD Word Sector Group Sector Group Protection * for Byte mode. -1 *2: Outputs 01H at protected sector group addresses and outputs 00H at unprotected sector group addresses. ...

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MBM29DL16XTD/BD Table 11.5 MBM29DL163TD/BD Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code Byte MBM29DL163TD Word Device Code Byte MBM29DL163BD Word Sector Group Protection * for Byte mode. -1 *2: Outputs 01H at protected sector group addresses and ...

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Table 11.7 MBM29DL164TD/BD Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code Byte MBM29DL164TD Word Device Code Byte MBM29DL164BD Word Sector Group Sector Group Protection * for Byte mode. -1 *2: Outputs 01H at protected sector group addresses ...

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MBM29DL16XTD/BD • Write Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself ...

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RESET Hardware Reset The MBM29DL16XTD/BD devices may be reset by driving the RESET pin to V requirement and has to be kept low (V Any operation in the process of being executed will be terminated and the internal state ...

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MBM29DL16XTD/BD Table 12 MBM29DL16XTD/BD Command Definitions First Bus Bus Command Write Write Cycle Sequence Cycles Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Word 1 XXXH F0H Read/Reset Byte Word 555H 3 Read/Reset AAAH Byte ...

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Notes: 1. Address bits “H” or “L” for all address commands except or Program Address (PA), Sector 11 19 Address (SA), and Bank Address (BA). 2. Bus operations are defined in Tables 3 and ...

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... MBM29DL161BD = 39H for 8 mode; MBM29DL161TD = 2236H and MBM29DL161BD = 2239H for 16 mode), (MBM29DL162TD = 2DH and MBM29DL162BD = 2EH for 8 mode; MBM29DL162TD = 222DH and MBM29DL162BD = 222EH for 16 mode), (MBM29DL163TD = 28H and MBM29DL163BD = 2BH for 8 mode; ...

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If the software (program code) for Autoselect command is stored into the Flash memory, the device and manufacture codes should be read from the other bank where is not contain the software. To terminate the operation necessary to ...

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MBM29DL16XTD/BD • Sector Erase Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The ...

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RY/BY output pin will be at Hi-Z and the DQ use the address of the erasing sector for reading DQ suspended. Further writes of the Erase Suspend command are ignored. When the erase operation has been suspended, the devices default ...

Page 56

MBM29DL16XTD/BD • Extended Command (1) Fast Mode MBM29DL16XTD/BD has Fast Mode function. This mode dispenses with the initial two unclock cycles required in the standard program command sequence by writing Fast Mode command into the command register. In this mode, ...

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Hidden ROM (Hi-ROM) Region The Hi-ROM feature provides a Flash memory region that the system may access through a new command sequence. This is primarily intended for customers who wish to use an Electronic Serial Number (ESN) in the ...

Page 58

MBM29DL16XTD/BD • Hidden ROM (Hi-ROM) Protect Command There are two methods to protect the Hidden ROM area. One is to write the sector group protect setup command(60H), set the sector address in the Hidden ROM area and (A group protect ...

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Status Embedded Program Algorithm Embedded Erase Algorithm Program Suspend Read Program (Program Suspended Sector) Suspended Program Suspend Read Mode (Non-Program Suspended Sector) In Progress Erase Suspend Read (Erase Suspended Sector) Erase Erase Suspend Read Suspended (Non-Erase Suspended Sector) Mode Erase ...

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MBM29DL16XTD/BD • Data Polling The MBM29DL16XTD/BD devices feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the devices ...

Page 61

The system can use DQ to determine whether a sector is actively erasing or is erase-suspended. When a bank 6 is actively erasing (that is, the Embedded Erase Algorithm is in progress), DQ Erase Suspend mode, DQ stops toggling. Successive ...

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MBM29DL16XTD/BD For example, DQ and DQ can be used together to determine if the erase-suspend-read mode is in progress (DQ toggles while DQ does not.) See also Table 14 and Figure 12 Furthermore, DQ can also ...

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Low V Write Inhibit CC To avoid initiation of a write cycle during V than V (min < the command register is disabled and all internal program/erase circuits are LKO CC LKO disabled. Under this ...

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... Not Supported 1Fh 0004h 01h = Supported Sector Protection Algorithm 20h 0000h Number of Sector for Bank 2 00h = Not Supported 21h 000Ah 3Fh = MBM29DL161TD 38h = MBM29DL162TD 22h 0000h 30h = MBM29DL163TD 20h = MBM29DL164TD 23h 0005h 3Fh = MBM29DL161BD 38h = MBM29DL162BD 30h = MBM29DL163BD 24h 0000h ...

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FLOW CHART EMBEDDED ALGORITHMS Increment Address * : The sequence is applied for The addresses differ from 8 mode. Figure 22 Embedded Program MBM29DL16XTD/BD Start Write Program Command Sequence (See below) Data Polling Device No Last Address ? Yes Programming ...

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MBM29DL16XTD/BD EMBEDDED ALGORITHMS Chip Erase Command Sequence* (Address/Command): 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H * : The sequence is applied for The addresses differ from 66 -70/90/12 Start Write Erase Command Sequence (See below) Data Polling or Toggle Bit Successfully ...

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Start Read (DQ 0 Addr Read (DQ 0 Addr Fail Note rechecked even Figure 24 Data Polling Algorithm MBM29DL16XTD/ ...

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MBM29DL16XTD/BD Note rechecked even changing to “1” -70/90/12 Start Read ( Bank address being executed 0 7 Addr Toggle 6 ? ...

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Increment PLSCNT No PLSCNT = 25? Yes Remove V from A ID Write Reset Command Device Failed * : byte mode Figure 26 Sector Group Protection Algorithm MBM29DL16XTD/BD Start Setup Sector Group Addr. (A ...

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MBM29DL16XTD/BD Notes: 1. All protected sector groups are unprotected. 2. All previously protected sector groups are protected once again. Figure 27 Temporary Sector Group Unprotection Algorithm 70 -70/90/12 Start RESET = V ID (Note 1) Perform Erase or Program Operations ...

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FAST MODE ALGORITHM Increment Address Note: The sequence is applied for The addresses differ from Figure 28 Embedded Program MBM29DL16XTD/BD Start 555H/AAH 2AAH/55H 555H/20H XXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte? Yes No Last Address ? Yes ...

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MBM29DL16XTD/BD Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed Figure 29 Extended Sector Group Protection Algorithm 72 -70/90/12 Start RESET = V ...

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... Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29DL16X T E DEVICE NUMBER/DESCRIPTION MBM29DL16X 16Mega-bit (2M 3.0 V-only Read, Program, and Erase Valid Combinations MBM29DL161TD/BD 70 MBM29DL162TD/BD 90 MBM29DL163TD/BD 12 MBM29DL164TD/BD MBM29DL16XTD/BD 70 PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout ...

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MBM29DL16XTD/BD PACKAGE DIMENSIONS 48-pin plastic TSOP(I) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00±0.20 (.787±.008) * 18.40±0.20 (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 1996 FUJITSU LIMITED F48029S-2C-2 C 48-pin plastic TSOP(I) (FPT-48P-M20) LEAD No. 1 INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) * 18.40±0.20 (.724±.008) ...

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FBGA (BGA-48P-M13) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 1998 FUJITSU LIMITED B480013S-1C-1 C MBM29DL16XTD/BD +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 8.00±0.20 4.00(.157) (.315±.008 48-Ø0.45±0.10 (48-.018±.004) -70/90/12 5.60(.221) 0.80(.031)TYP ...

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MBM29DL16XTD/BD FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan Tel: 81(44) 754-3763 Fax: 81(44) 754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, ...

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