sg2567rdr212452ibv ETC-unknow, sg2567rdr212452ibv Datasheet - Page 10

• Manufacturer Part Number: sg2567rdr212452ibv
• Description: Dram Module Ddr2 Sdram 2gbyte 240rdimm
• Manufacturer: ETC-unknow

Serial Presence Detect Table (Contd.)
Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:[phone] • Fax:[phone] • E-mail: [e-mail]
Europe: 5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: [phone] • Fax: [phone]
Asia/Pacific: Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: [phone] • Fax: [phone]
Byte No.
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47~61
62
63
64
65
66~71
72
Byte Description
Minimum row precharge time (=tRP)
Minimum row active to row active delay (=tRRD)
Minimum RAS to CAS delay (=tRCD)
Minimum activate precharge time (=tRAS)
Module row density
Command and Address signal input setup time
Command and Address signal input hold time
Data signal input setup time
Data signal input hold time
Write recovery time (=tWR)
Internal write to read command delay (=tWTR)
Internal read to precharge delay (=tRTP)
Memory Analysis Probe Characteristics
Extension of tRC and tRFC
Device Minimum activate/auto-refresh time (=tRC)
Device Minimum auto-refresh to active/auto-refresh
time (=tRFC)
Maximum device cycle time (=tCK max)
Device DQS-DQ skew for DQS and associated DQ
signals (=tDQSQ max)
Device read data hold skew factor (=tQHS)
PLL relock time
Reserved
SPD data revision code
Checksum for bytes 0~62
Manufacturer JEDEC ID code
..........Manufacturer JEDEC ID code
..........Manufacturer JEDEC ID code
Manufacturing location
SG2567RDR212452UUV
Continuation Code
Value Supported
SMART’s ID
See Note 1
Not Used
0.20ns
0.27ns
0.10ns
0.17ns
0.24ns
0.34ns
105ns
7.5ns
7.5ns
7.5ns
None
15ns
15ns
45ns
15ns
60ns
15µs
1GB
8ns
1.2
-
-
August 2, 2006
Value in Hex
3Ch
3Ch
2Dh
3Ch
3Ch
EFh
1Eh
01h
20h
27h
10h
17h
1Eh
1Eh
00h
00h
69h
80h
18h
22h
0Fh
00h
12h
7Fh
94h
00h
01h
10