sg25s12dt Sirectifier Semiconductors, sg25s12dt Datasheet - Page 2

• Manufacturer Part Number: sg25s12dt
• Description: Discrete Igbts
• Manufacturer: Sirectifier Semiconductors

Reverse Diode (FRED)
Symbol
Symbol
R
R
C
t
C
R
C
t
t
t
Q
Q
E
E
E
I
d(off)
d(on)
d(on)
d(off)
thCK
g
Q
thJC
V
RM
oes
t
t
t
t
t
thJC
ies
res
off
on
off
ge
gc
ts
ri
fi
ri
fi
rr
F
g
I
Pulse test, t 300us, duty cycle 2%
V
I
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
IGBT
I
V
L
I
C
C
C
C
F
F
CE
CC
CC
R
=25A; V
=25A; V
=25A; V
=25A; V
=30A; T
=1A; -di/dt=100A/us; V
=540V; I
=25V; V
=800V; R
=800V; R
0.05uH; T
CE
CE
(Clamp)
(Clamp)
T
VJ
VJ
CE
GE
GE
GE
SG25S12T, SG25S12DT
F
=150
=25
GE
=20V
=15V; V
=15V/0V; L=180uH
G
=15V/0V; L=180uH
G
=30A; -di
G
G
VJ
=0V; f=1MHz
=R
=R
o
=100
C
J
J
o
=25
=150
Test Conditions
off
off
Test Conditions
C
0.8V
0.8V
=22
=22
CC
o
o
F
C
C
/dt=240A/us
o
=960V
CES'
CES'
C
R
=30V; T
higher T
higher T
Discrete IGBTs
VJ
=25
J
J
or
or
o
C
min.
min.
Characteristic Values
Characteristic Values
(T
(T
J
J
=25
=25
o
o
2150
160
110
C , unless otherwise specified)
225
C , unless otherwise specified)
typ.
730
820
typ.
2.9
1.5
3.8
42
16
20
45
40
30
50
36
40
-
-
max.
2600
max.
190
130
2.55
300
950
990
2.2
60
2.0
4.6
18
0.9
52
3.8
0.4
39
43
50
60
60
40
-
-
K/W
K/W
K/W
Unit
Unit
mJ
mJ
mJ
nC
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
A