mma-022030b MicroWave Technology, Inc., mma-022030b Datasheet
mma-022030b
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mma-022030b Summary of contents
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... MTTF 1.0E6 hours @ +85 °C Description: The MMA-022030B 20GHz broadband power amplifier with nearly 1W output power (P-2dB realized in advanced AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications ...
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... 510-651-6700 510-651-2208 FAX WEB www.mwtinc.com for information on other MwT MMIC products. Updated 5/29/2007, Page MMA-022030B GHz GaAs MMIC +29dBm Power Amplifier (1) Noise Figure VDD = +9.0V, IDD = 490mA -0.42V NF @ +25C ...
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... Rating + 9 600 mA +175 ºC -55 ºC to +85 ºC -65 ºC to +175 º dBm 510-651-6700 510-651-2208 FAX WEB www.mwtinc.com for information on other MwT MMIC products. Updated 5/29/2007, Page MMA-022030B GHz GaAs MMIC +29dBm Power Amplifier www.mwtinc.com Data Sheet March 2007 ...
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... MMA-022030B Bonding/Assembly Diagram Bonding/Assembly Recommendations: 1. Use epoxy with good thermal and electrical conductivity to attach the device. Curing temperature should maintain at approximately +150 °C. 2. Use 1.0 mil diameter Au wire, 2 parallel each pad for RF input and output pads. Keep the wire length less than 10 mils to minimize its impact to high frequency performance ...