mhw916 Freescale Semiconductor, Inc, mhw916 Datasheet

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mhw916

Manufacturer Part Number
mhw916
Description
Uhf Silicon Fet Power Amplifier
Manufacturer
Freescale Semiconductor, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MHW916
Manufacturer:
MOTOROLA
Quantity:
28
Part Number:
MHW916
Manufacturer:
MITSUBISHI
Quantity:
300
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Silicon FET Power Amplifier
Mobile (GSM) Base Station applications in the 925–960 MHz frequency range.
MHW916 operates from a 26 Volt supply and requires 15.5 dBm of RF input
power.
(1) Adjust P in for Specified P out .
REV 3
©
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
MOTOROLA RF DEVICE DATA
DC Supply Voltage
DC Bias Voltage
RF Input Power
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Standby Current (Pin Removed, I stdby = I S1 + I S2 )
Frequency Range
Quiescent Current (P in = 0 mW)
Power Gain (P out = 16 W) (1)
Output Power at 1.0 dB Compression
Efficiency (1.0 dB Compression Power)
Efficiency (P out = 16 W) (1)
Input VSWR (P out = 16 W) (1)
Harmonic 2 f o (P out = 16 W) (1)
Harmonic 3 f o (P out = 16 W) (1)
Ripple (P out = 16 W) (1)
Load Mismatch Stress (P out = 16 W)
Stability (P out = 10 mW to 16 W)
Stability (P out = –5.0 dBm to 42 dBm, f = 925 to 960 MHz)
Designed specifically for the European Digital Extended Group Special
Motorola, Inc. 1997
Specified 26 Volt Characteristics
50
Meet GSM Linearity Specification for Base Station up to
12.5 Watts
Load VSWR = 5:1, All Phase Angles
Load VSWR = 3:1, All Phase Angles (Except Harmonics)
Load VSWR = 2:1, All Phase Angles
RF Input Power: 15.5 dBm Max
RF Output Power: 16 Watts at 1.0 dB Compression Point
Minimum Gain: 26.5 dB
Harmonics: –35 dBc Max at 2Fo
Input/Output System
Characteristic
Parameter
(T C = 25 C, V S1 = V S2 = 26 Vdc, V bias = 15 Vdc, 50 ohm system)
Idq1 + Idq2
VSWR in
Symbol
P1dB
BW
Gp
H 2
H 3
Rp
1
2
Symbol
I stdby
P out
T stg
P in
V S
V B
T C
All Spurious Outputs Lower Than –46 dBm or
26.5
Min
925
16
37
33
Than 60 dB Below Desired Signal
No Degradation in Output Power
–85 dBc (Whichever the Higher)
All Spurious Outputs More
CASE 301AB– 02, STYLE 1
MHW916
Typ
400
–40
–60
1.0
30
44
39
925–960 MHz
RF POWER
AMPLIFIER
– 30 to +100
16 WATT
– 5.0 to +85
Value
400
28
16
19
25
Order this document
Max
32.5
960
–35
–45
2:1
by MHW916/D
MHW916
Unit
MHz
dBc
dBc
mA
dBm
dB
dB
Unit
W
Vdc
Vdc
%
%
mA
W
C
C
1

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mhw916 Summary of contents

Page 1

... UHF Silicon FET Power Amplifier Designed specifically for the European Digital Extended Group Special Mobile (GSM) Base Station applications in the 925–960 MHz frequency range. MHW916 operates from a 26 Volt supply and requires 15.5 dBm of RF input power. Specified 26 Volt Characteristics RF Input Power: 15.5 dBm Max RF Output Power: 16 Watts at 1 ...

Page 2

... TEST FIXTURE C1, C2, C3 0.018 F C4, C5, C6 0.1 F C7, C8, C9 1 Microstrip Figure 1. MHW916 Test Circuit Diagram OUTPUT SPECTRUM POWER ANALYZER METER OUT 20 dB DUAL DIRECTIONAL COUPLER POWER TERMINATION MOTOROLA RF DEVICE DATA ...

Page 3

... FREQUENCY (MHz) Frequency Vdc V bias = 15 Vdc P out = 16W 935 940 945 950 955 960 f, FREQUENCY (MHz 925 MHz 960 MHz V bias = 15 Vdc 25°C 25 25.5 26 26 SUPPLY VOLTAGE (Vdc) versus Supply Voltage MHW916 3 ...

Page 4

... BSC P 0.008 0.012 0.20 0.31 Q 0.151 0.161 3.84 4.09 R 0.685 0.705 17.40 17.91 S 0.598 0.612 15.19 15.55 V 0.155 BSC 3.94 BSC W 0.355 BSC 9.02 BSC Y 0.210 REF 5.33 REF STYLE 1: PIN 1. RF INPUT 2. +DC (BIAS) 3. +DC (SUPPLY) 4. +DC (SUPPLY OUTPUT CASE: GROUND Mfax is a trademark of Motorola, Inc. MOTOROLA RF DEVICE DATA MHW916/D ...

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