ap0903gm APEC, ap0903gm Datasheet - Page 3

• Manufacturer Part Number: ap0903gm
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

50
40
30
20
10
14
12
10
12
10
0
8
6
8
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
Reverse Diode
0
V
V
V
DS
SD
4
GS
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
0.4
T
j
1
=150
T
0.6
6
o
C
A
T
I
= 25
D
A
1
= 10 A
=25
o
0.8
C
℃
8
V
T
2
j
G
1
=25
=4.0V
7.0 V
6.0 V
5.0 V
10 V
o
C
1.2
2
10
1.9
1.4
0.9
0.4
50
40
30
20
10
1.6
1.2
0.8
0.4
0.0
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
= 12 A
=10V
v.s. Junction Temperature
Junction Temperature
V
T
DS
T
j
1
0
0
, Junction Temperature (
j
T
, Drain-to-Source Voltage (V)
, Junction Temperature (
A
= 150
o
C
2
50
50
AP0903GM
o
V
100
100
3
C)
o
G
C)
=4.0V
7.0 V
6.0 V
5.0 V
10 V
150
150
4
3