ap4407gm APEC, ap4407gm Datasheet - Page 4

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ap4407gm

Manufacturer Part Number
ap4407gm
Description
P-channel Enhancement Mode Power Mosfet
Manufacturer
APEC
Datasheet

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AP4407GM
0.01
100
0.1
14
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
V
90%
10%
V
DS
I
V
Single Pulse
GS
D
T
DS
=-10.7A
A
-V
=-24V
=25
Q
20
DS
t
d(on)
G
o
C
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
1
t
r
40
10
t
d(off)
60
t
f
100us
1ms
10ms
100ms
1s
10s
DC
80
100
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
0.01
100
0.1
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
V
0.001
0.02
0.01
G
DUTY=0.5
0.05
5
Single Pulse
0.2
0.1
-V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
0.1
13
Q
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
Rthja=125℃
21
10
j
= P
t
f=1.0MHz
℃ /W
℃ ℃
DM
T
x R
100
25
thja
Ciss
Crss
+ T
Q
Coss
a
1000
29

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