mc100ep08mnr4g ON Semiconductor, mc100ep08mnr4g Datasheet - Page 6

• Manufacturer Part Number: mc100ep08mnr4g
• Description: Differential 2-input Xor/xnor
• Manufacturer: ON Semiconductor

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
18. Input and output parameters vary 1:1 with V
19. All loading with 50 W to V
20. V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
21. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
Table 10. 100EP DC CHARACTERISTICS, NECL
Symbol
Table 11. AC CHARACTERISTICS
Symbol
I
V
V
V
V
V
I
I
f
t
t
t
V
t
t
EE
IH
IL
max
PLH
PHL
JITTER
r
f
OH
OL
IH
IL
IHCMR
PP
input signal.
IHCMR
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
Power Supply Current
Output HIGH Voltage (Note 19)
Output LOW Voltage (Note 19)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 20)
Input HIGH Current
Input LOW Current
Maximum Frequency (Figure 2)
Propagation Delay to
Output Differential
Cycle−to−Cycle Jitter (Figure 2)
Input Voltage Swing
(Differential Configuration)
Output Rise/Fall Times
(20% − 80%)
Characteristic
Characteristic
CC
EE
− 2.0 V.
, V
IHCMR
V
max varies 1:1 with V
CC
D, D to Q, Q
= 0 V; V
CC
D
D
.
Q, Q
−1145
−1945
−1225
−1945
−150
Min
EE
0.5
20
V
EE
= −3.0 V to −5.5 V or V
http://onsemi.com
V
CC
Min
170
150
+ 2.0
70
−40°C
−1020
−1820
Typ
CC
= 0 V; V
28
. The V
−40°C
Typ
220
800
120
> 3
0.2
6
−1695
−1625
EE
−895
−880
Max
150
0.0
36
IHCMR
= −5.5 V to −3.0 V (Note 18)
1200
Max
280
170
< 1
range is referenced to the most positive side of the differential
−1945
−1225
−1945
−1145
−150
CC
Min
0.5
20
V
EE
= 3.0 V to 5.5 V; V
Min
180
150
80
+ 2.0
−1020
−1820
25°C
Typ
30
25°C
Typ
250
800
130
> 3
0.2
CC
− 2.0 V.
−1695
−1625
−895
−880
Max
150
0.0
38
1200
Max
300
180
< 1
EE
= 0 V (Note 21)
−1145
−1945
−1225
−1945
−150
Min
0.5
20
V
Min
200
150
100
EE
+ 2.0
−1020
−1820
85°C
Typ
85°C
32
Typ
270
800
150
> 3
0.2
−1695
−1625
−895
−880
Max
1200
150
Max
0.0
320
200
< 1
40
Unit
Unit
GHz
mA
mV
mV
mV
mV
mV
mA
mA
ps
ps
ps
V