nb3n502 ON Semiconductor, nb3n502 Datasheet - Page 3

• Manufacturer Part Number: nb3n502
• Description: 14 Mhz To 190 Mhz Pll Clock Multiplier
• Manufacturer: ON Semiconductor

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
2. Parameters are guaranteed by characterization and design, not tested in production.
3. Parameters are guaranteed by characterization and design, not tested in production.
Table 6. DC CHARACTERISTICS
Table 7. AC CHARACTERISTICS
Table 5. MAXIMUM RATINGS
t
Symbol
jitter (pk−to−pk)
t
V
Symbol
Symbol
T
q
q
jitter (rms)
T
V
DD
stg
JA
JC
A
V
f
V
f
V
f
I
I
V
V
OUT
DC
V
V
C
I
CLK
t
Xtal
DD
SC
r
OH
OL
IM
/t
IH
IH
IL
IL
in
f
Positive Power Supply
Input Voltage
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Power Supply Current
(unloaded CLKOUT operating at 100 MHz with 20 MHz crystal)
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage, CLK only (pin 1)
Input LOW Voltage, CLK only (pin 1)
Input HIGH Voltage, S0, S1
Input LOW Voltage, S0, S1
Input level of S1 when open (Input Mid Point)
Input Capacitance, S0, S1
Output Short Circuit Current
Crystal Input Frequency
Clock Input Frequency
Output Frequency Range
V
V
Clock Output Duty Cycle at 1.5 V up to 190 MHz
Period Jitter (RMS, 1 σ)
Total Period Jitter, (peak−to−peak)
Output rise/fall time (0.8 V to 2.0 V / 2.0 V to 0.8 V)
DD
DD
= 4.5 to 5.5 V (5.0 V ± 10%)
= 3.0 to 3.6 V (3.3 V ± 10%)
Parameter
(V
(V
DD
DD
Characteristic
Characteristic
= 3 V to 5.5 V unless otherwise noted, GND = 0 V, T
= 3 V to 5.5 V unless otherwise noted, GND = 0 V, T
I
I
OH
OL
= 25 mA
= −25 mA TTL High
http://onsemi.com
NB3N502
Condition 1
GND = 0 V
500 LFPM
0 LFPM
(Note 1)
3
Condition 2
(V
V
SOIC−8
SOIC−8
SOIC−8
DD
DD
Min
Min
2.4
14
14
45
/ 2) + 1
5
2
– 0.5
A
A
= −40°C to +85°C) (Note 2)
= −40°C to +85°C) (Note 3)
V
V
V
DD
DD
DD
± 70
Typ
Typ
±40
20
50
15
4
1
GND – 0.5 = V
÷ 2
/ 2
/ 2
−65 to +150
−40 to +85
V
41 to 44
Rating
DD
190
130
(V
7
+ 0.5
DD
Max
Max
190
120
0.4
0.5
27
50
55
/ 2) −1
I
=
Units
°C/W
°C/W
°C/W
Unit
Unit
MHz
MHz
MHz
MHz
mA
mA
°C
°C
pF
ps
ps
ns
V
V
%
V
V
V
V
V
V
V