nb3n5573.pdf ON Semiconductor, nb3n5573.pdf Datasheet - Page 3

• Manufacturer Part Number: nb3n5573.pdf
• Description: 3.3v, Crystal - To- Hcsl Clock Generator
• Manufacturer: ON Semiconductor

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
3. JEDEC standard multilayer board - 2S2P (2 signal, 2 power).
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
4. Measurement taken with outputs terminated with R
Table 4. MAXIMUM RATINGS
Symbol
Table 5. DC CHARACTERISTICS
V
V
T
T
q
q
T
VDD
I
I
V
V
V
V
V
DV
Symbol
DD
DDOE
stg
JA
JC
sol
A
DD
I
IH
IL
OH
OL
cross
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
set at 475 W. See Figure 3.
cross
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Positive Power Supply
Input Voltage (V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction-to-Ambient)
Thermal Resistance (Junction-to-Case)
Wave Solder
Power Supply Voltage
Power Supply Current
Power Supply Current when OE is Set Low
Input HIGH Voltage (X/CLK, S0, S1, and OE)
Input LOW Voltage (X/CLK, S0, S1, and OE)
Output HIGH Voltage for HCSL Output (See Figure 5)
Output LOW Voltage for HCSL Output (See Figure 5)
Crossing Voltage Magnitude (Absolute) for HCSL Output
Change in Magnitude of V
Table 3. ATTRIBUTES
1. For additional information, see Application Note AND8003/D.
ESD Protection
Moisture Sensitivity, Indefinite Time Out of Dray Pack (Note 1)
Flammability Rating
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
IN
Parameter
)
(Note 2)
cross
(V
Characteristic
DD
for HCSL Output
= 3.3 V ±10%, GND = 0 V, T
Characteristic
S
= 33.2 W, R
http://onsemi.com
NB3N5573
Oxygen Index: 28 to 34
Condition 1
GND = 0 V
GND = 0 V
500 lfpm
(Note 3)
L
Human Body Model
0 lfpm
= 49.9 W, with test load capacitance of 2 pF and current biasing resistor
3
A
= -40°C to +85°C, Note 4)
GND v V
Condition 2
TSSOP–16
TSSOP–16
TSSOP-16
GND - 300
2000
-150
2.97
Min
660
250
UL 94 V-0 @ 0.125 in
I
v V
Level 1
DD
> 2 kV
Value
7623
Typ
120
700
3.3
-0.5 V to V
0
-65 to +150
-40 to +85
33 to 36
Rating
138
108
265
4.6
V
DD
DD
Max
3.63
135
800
850
150
550
150
+0.5 V
65
+ 300
Units
°C/W
°C/W
°C/W
Unit
mA
mA
mV
mV
mV
mV
mV
mV
°C
°C
°C
V
V
V