ds0026 National Semiconductor Corporation, ds0026 Datasheet - Page 2

• Manufacturer Part Number: ds0026
• Description: Dual High-speed Mos Driver
• Manufacturer: National Semiconductor Corporation

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V
I
V
I
V
V
I
I
t
t
t
t
Symbol
IH
IL
CC(ON)
CC(OFF)
ON
OFF
r
f
Switching Characteristics
(T
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. Except for “Operating Temperature Range” they
are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics provides conditions for actual device operation.
Note 2: These specifications apply for V
Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown
as max or min on absolute value basis.
Note 4: All typical values for T
Note 5: Rise and fall time are given for MOS logic levels; i.e., rise time is transition from logic “0” to logic “1” which is voltage fall.
Note 6: The high current transient (as high as 1.5A) through the resistance of the internal interconnecting V
the low state can appear as negative feedback to the input. If the external interconnecting lead from the driving circuit to V
resistance, it can subtract from the switching response.
IH
IL
OL
OH
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
Input Current
Input Voltage (V
Peak Output Current
Electrical Characteristics
Symbol
+
A
− V
= 25˚C) (Notes 5, 6)
−
Differential Voltage
Logic “1” Input Voltage
Logic “1” Input Current
Logic “0” Input Voltage
Logic “0” Input Current
Logic “1” Output Voltage
Logic “0” Output Voltage
“ON” Supply Current
(one side on)
“OFF” Supply Current
Turn-On Delay
Turn-Off Delay
Rise Time
Fall Time
IN
− V
Parameter
Parameter
−
)
A
= 25˚C.
+
− V
−
= 10V to 20V, C
(Figure 1)
(Figure 2)
(Figure 1)
(Figure 2)
(Figure 1),
(Note 5)
(Figure 2),
(Note 5)
(Figure 1),
(Note 5)
(Figure 2),
(Note 5)
V
V
V
V
V
V
I
V
V
V
OH
−
IN
−
IN
IN
IN
+
+
IN
(Notes 2, 3, 4)
− V
− V
= 0V
= 0V
− V
− V
− V
− V
− V
= − 1 mA
(Note 1)
−
−
−
−
−
−
−
= 20V, V
= 20V,
= 2.4V
= 0V
= 2.4V, I
= 0.4V, V
= 0V
L
Conditions
= 1000 pF, over the temperature range of 0˚C to +70˚C for the DS0026CN.
100 mA
5.5V
1.5A
22V
Conditions
IN
OL
C
C
C
C
C
C
C
C
SS
L
L
L
L
L
L
L
L
− V
= 1 mA
= 500 pF
= 1000 pF
= 500 pF
= 1000 pF
= 500 pF
= 1000 pF
= 500 pF
= 1000 pF
2
−
V
+
= 2.4V
Maximum Power Dissipation
25˚C
Operating Temperature Range
Storage Temperature Range
Lead Temperature
Note:
+ 1.0V
(Soldering, 10 sec.)
*
Derate N08E package 9.3 mW/˚C for T
Min
−
5
lead during the output transition from the high state to
V
+
Min
− 1.0
2
−
Typ
*
7.5
11
12
13
15
20
30
36
12
17
28
31
is electrically long, or has significant dc
at T
A
V
V
Typ
−
+
=
A
1.5
0.6
10
−3
30
10
+0.7
−0.8
above 25˚C. J
Max
12
15
18
35
40
50
16
25
35
40
−65˚C to +150˚C
V
Max
−
−10
100
0.4
15
40
0˚C to +70˚C
+1.0
A
= 107˚C/W
420mW
Units
300˚C
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
mA
mA
µA
µA
V
V
V
V